28/Sep/2017 | 8542323900 | Spare parts for the repair and maintenance - dynamic memories on semiconductor solid-card ram (is a set of semiconductor elements on the circuit board, the amount of memory to 8gb), to see. update: us | CHINA | *** | 0,16 | KG | 0.16 | 104,51 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
20/Sep/2017 | 8542323900 | Dynamic random access memory. memory operational for pc afld48vk1p ddr4-2133 8gb dimm memory 8 gb: not a crowbar el.oborudovaniya and al. nodes afox corporation limited afox afox 100 | CHINA | *** | 2 | KG | 2 | 5463,07 | ***** |
20/Sep/2017 | 8542323900 | Dynamic random access memory. memory operational for pc afsd34bk1l ddr3-1600 4gb sodimm lp memory 4 gb: not a crowbar el.oborudovaniya and al. nodes afox corporation limited afox afox 100 | CHINA | *** | 1 | KG | 1 | 2311,53 | ***** |
19/Sep/2017 | 8542323900 | Other integrated circuits, microcircuits of memory, art. mt41k256m16tw-093: p 4gb. scope: telecommunications equipment. does not contain encryption function and cryptographic algorithms. micron technology, i | CHINA | *** | 0,01 | KG | 0.01 | 236,7 | ***** |
15/Sep/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity more than 512 mbit: el.modul of ram 4gb ddr3, intended for acceleration communication in the computer 4 gb and run at 1866 mhz (complete with service li | CHINA | *** | 0,16 | KG | 0.16 | 78,81 | ***** |
08/Sep/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity greater than 512 mbit encryption (cryptographic) facilities and elements are missing are not intended for secretly obtaining and recording: main memory capacity: | CHINA | *** | 0,19 | KG | 0.19 | 261,74 | ***** |
02/Sep/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity greater than 512 mbit: el.modul of ram 4gb ddr3, is designed to accelerate data exchange with computers, 4 gb and runs at 1866 mhz (complete with a service | CHINA | *** | 0,16 | *** | 0.16 | 78,81 | ***** |