28/Nov/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity greater than 512 mbit: memory modules for notebooks, and are not encryption (cryptographic) devices are free module encryption | TAIWAN CHINA | KINGSTON | 850 | PC | 28.80 | 54597,14 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
16/Nov/2017 | 8542323900 | Integrated solid chips for electronic instrument and computer engineering: | *** | KINGSTON | 40 | PC | 0.04 | 185,2 | ***** |
03/Nov/2017 | 8542323900 | Spare parts for the repair and maintenance - dynamic memories on semiconductor solid-card ram (is a set of semiconductor elements on the circuit board, the amount of memory to 4 gb), to see. addition | *** | HYNIX | 8 | PC | 0.45 | 185,93 | ***** |
28/Sep/2017 | 8542323900 | Spare parts for the repair and maintenance - dynamic memories on semiconductor solid-card ram (is a set of semiconductor elements on the circuit board, the amount of memory to 8gb), to see. update: us | CHINA | *** | 0,16 | KG | 0.16 | 104,51 | ***** |
26/Sep/2017 | 8542323900 | Dynamic volatile random access memory predna. installation the firewall in the individual. kart.upakovke: expansion module ram for protection of the device data and centralized management configuration parameters have | TAIWAN CHINA | *** | 1 | KG | 1 | 218,96 | ***** |
25/Sep/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity of 8 gb: memory modules mra3b08 8g dimm registered, nokia solutions and networks ltd nokia nokia c113075 mra3b08 6 | PHILIPPINES | *** | 0,18 | KG | 0.18 | 1401,78 | ***** |
22/Sep/2017 | 8542323900 | Dynamic random access memory. operational for pc memory sodimm ddr3-1333 2gb ggs32gb1333c9sbp1 memory 2 gb: not a crowbar el.oborudovaniya and al. nodes golden emperor international ltd geil geil 2 | TAIWAN CHINA | *** | 0,02 | KG | 0.02 | 22,14 | ***** |
19/Sep/2017 | 8542323900 | Other integrated circuits, microcircuits of memory, art. mt41k256m16tw-093: p 4gb. scope: telecommunications equipment. does not contain encryption function and cryptographic algorithms. micron technology, i | CHINA | *** | 0,01 | KG | 0.01 | 236,7 | ***** |
15/Sep/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity more than 512 mbit: el.modul of ram 4gb ddr3, intended for acceleration communication in the computer 4 gb and run at 1866 mhz (complete with service li | CHINA | *** | 0,16 | KG | 0.16 | 78,81 | ***** |
13/Sep/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity greater than 512 mbit encryption (cryptographic) facilities and elements are missing are not intended for secretly obtaining and recording: main memory type sd | UNITED STATES | *** | 0,28 | KG | 0.28 | 179,2 | ***** |