26/Sep/2017 | 8541290000 | Kat.pvn 4.2 matrix transistor 1nt251 i93.456.000 tu col.2 pcs poz.1.38 list for № 2 silicon epitaxial planetary-npn transistor matrix (assembly) the metal packages, prednaznochennaya for use in radio apparatus c: am | RUSSIA | *** | 0,02 | KG | 0.02 | 150,97 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
22/Sep/2017 | 8541290000 | Npn silicon transistors with transition from the output power of at least 25w, operating speed more 3mhz are designed to amplify signals in electrical equipment: transistor ltd. "saransk plant of precision instruments" sztp not the absence | RUSSIA | *** | 0,3 | KG | 0.30 | 51,52 | ***** |
20/Sep/2017 | 8541290000 | Panel for electrical equipment for voltage 12v for assembling a / m volkswagen tiguan, polo, valves: control unit gateway product provided multiturn tape, metal pallets plastic crates, 13, 833 weight kg, co | RUSSIA | *** | 0,08 | KG | 0.08 | 63,25 | ***** |
19/Sep/2017 | 8541290000 | Transistor with insulated gate and dual channel n and p type mosfet, the power dissipation 2w: item 11 transistor irf-7319, art. irf 7319-10sht. intended for surface mounting block key electronic device 4ak a6-a-90-150 / 80; ref. 12-tp | RUSSIA | *** | *** | KG | ****** | 90,97 | ***** |
15/Sep/2017 | 8541290000 | Transistor semiconductor dissipation of 38w for consumer electronic appliances, audio-visual equipment. type of semiconductor which - odnoelementny (kremny) (lom not mark at upak 125-44126935 tranzistor poluprovodnikovy dissipation of 140 tues for byto.. | RUSSIA | *** | 1,52 | KG | 1.52 | 454,28 | ***** |
05/Sep/2017 | 8541290000 | Transistors, except phototransistor, spare parts of equipment check-out equipment: transistor si7949dp-t1-e3, part number si7949dp-ti-e3, moschn.rasseivaniya 1.5 w visha y visha y 38321 3000 | RUSSIA | *** | 0,74 | KG | 0.74 | 1,230 | ***** |