27/Nov/2017 | 8541290000 | Sborka.sborka transistor comprises a transistor designed for operation in the frequency range up to 1mhz (0, 001ggts) | GERMANY | WITHOUT A TRADEMARK | 26 | PC | 1.50 | 9239,1 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
20/Nov/2017 | 8541290000 | Bipolar transistor silicon pnp low frequency structure, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the current transistor 4mhz, for industrial applications: 2t836a | REPUBLIC OF INDIA | Fine "Elter" | 400 | PC | 0.38 | 703,22 | ***** |
13/Nov/2017 | 8541290000 | Transistor semiconductor dissipation of 110w for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create weapons and military equipment). packed in shining | POLAND | INFIN | 175 | PC | 0.36 | 64,75 | ***** |
08/Nov/2017 | 8541290000 | 5.2 property according to the list № 11430.1781: ref. for persons. 49 transistor p210sh - 18 pcs. transistor germanium alloyed universal low frequency high power, 64b maximum voltage, maximum power dissipation 1.5w. apply | REPUBLIC OF INDIA | IZOBRAITELNY mark of JSC "Plant GAMMA" | 18 | PC | 0.68 | 372,61 | ***** |
03/Nov/2017 | 8541290000 | Transistors, phototransistor except not scrap electric equipment for repair and maintenance equipment company nikoncm. addition | KINGDOM OF THE NETHERLANDS | NIKON | 1 | PC | 0.00 | 15,62 | ***** |
26/Sep/2017 | 8541290000 | Kat.pvn 4.2 matrix transistor 1nt251 i93.456.000 tu col.2 pcs poz.1.38 list for № 2 silicon epitaxial planetary-npn transistor matrix (assembly) the metal packages, prednaznochennaya for use in radio apparatus c: am | RUSSIA | *** | 0,02 | KG | 0.02 | 150,97 | ***** |
22/Sep/2017 | 8541290000 | Npn silicon transistors with transition from the output power of at least 25w, operating speed more 3mhz are designed to amplify signals in electrical equipment: transistor ltd. "saransk plant of precision instruments" sztp not the absence | RUSSIA | *** | 0,3 | KG | 0.30 | 51,52 | ***** |
20/Sep/2017 | 8541290000 | Panel for electrical equipment for voltage 12v for assembling a / m volkswagen tiguan, polo, valves: control unit gateway product provided multiturn tape, metal pallets plastic crates, 13, 833 weight kg, co | RUSSIA | *** | 0,08 | KG | 0.08 | 63,25 | ***** |
19/Sep/2017 | 8541290000 | Transistor with insulated gate and dual channel n and p type mosfet, the power dissipation 2w: item 11 transistor irf-7319, art. irf 7319-10sht. intended for surface mounting block key electronic device 4ak a6-a-90-150 / 80; ref. 12-tp | RUSSIA | *** | *** | KG | ****** | 90,97 | ***** |
15/Sep/2017 | 8541290000 | Transistor semiconductor dissipation of 38w for consumer electronic appliances, audio-visual equipment. type of semiconductor which - odnoelementny (kremny) (lom not mark at upak 125-44126935 tranzistor poluprovodnikovy dissipation of 140 tues for byto.. | RUSSIA | *** | 1,52 | KG | 1.52 | 454,28 | ***** |