H E C K A F E Trade Data of Russia Exports under HS Code 8541290000

Get h e c k a f e trade data of Russia exports under HS code 8541290000. Check Russia trade statistics of h e c k a f e exports under HS code 8541290000 with market share and size, price, name of trade partners etc.

 
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15 Shipments Records (Demo)

8541290000  
DateHS CodeProduct DescriptionDestination CountryTrademarkQuantityUnitNet WeightTotal Value [USD] Exporter Name
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27/Nov/20178541290000Sborka.sborka transistor comprises a transistor designed for operation in the frequency range up to 1mhz (0, 001ggts)GERMANYWITHOUT A TRADEMARK26PC1.509239,1 ***** 84 More Columns Available along with Company Name and Other Details etc.
20/Nov/20178541290000Bipolar transistor silicon pnp low frequency structure, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the current transistor 4mhz, for industrial applications: 2t836aREPUBLIC OF INDIAFine "Elter"400PC0.38703,22 *****
13/Nov/20178541290000Transistor semiconductor dissipation of 110w for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create weapons and military equipment). packed in shiningPOLANDINFIN175PC0.3664,75 *****
08/Nov/201785412900005.2 property according to the list № 11430.1781: ref. for persons. 49 transistor p210sh - 18 pcs. transistor germanium alloyed universal low frequency high power, 64b maximum voltage, maximum power dissipation 1.5w. applyREPUBLIC OF INDIAIZOBRAITELNY mark of JSC "Plant GAMMA"18PC0.68372,61 *****
03/Nov/20178541290000Transistors, phototransistor except not scrap electric equipment for repair and maintenance equipment company nikoncm. additionKINGDOM OF THE NETHERLANDSNIKON1PC0.0015,62 *****
26/Sep/20178541290000Kat.pvn 4.2 matrix transistor 1nt251 i93.456.000 tu col.2 pcs poz.1.38 list for № 2 silicon epitaxial planetary-npn transistor matrix (assembly) the metal packages, prednaznochennaya for use in radio apparatus c: amRUSSIA***0,02KG0.02150,97 *****
22/Sep/20178541290000Npn silicon transistors with transition from the output power of at least 25w, operating speed more 3mhz are designed to amplify signals in electrical equipment: transistor ltd. "saransk plant of precision instruments" sztp not the absenceRUSSIA***0,3KG0.3051,52 *****
20/Sep/20178541290000Panel for electrical equipment for voltage 12v for assembling a / m volkswagen tiguan, polo, valves: control unit gateway product provided multiturn tape, metal pallets plastic crates, 13, 833 weight kg, coRUSSIA***0,08KG0.0863,25 *****
19/Sep/20178541290000Transistor with insulated gate and dual channel n and p type mosfet, the power dissipation 2w: item 11 transistor irf-7319, art. irf 7319-10sht. intended for surface mounting block key electronic device 4ak a6-a-90-150 / 80; ref. 12-tpRUSSIA******KG******90,97 *****
15/Sep/20178541290000Transistor semiconductor dissipation of 38w for consumer electronic appliances, audio-visual equipment. type of semiconductor which - odnoelementny (kremny) (lom not mark at upak 125-44126935 tranzistor poluprovodnikovy dissipation of 140 tues for byto..RUSSIA***1,52KG1.52454,28 *****
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