Ukraine Trade Data of Red Ed Imports Under HS Code 8541290010
Lookup Ukraine trade data of red ed imports under HS code 8541290010. Check Ukraine import trading parters of red ed
20 Shipments Records (Demo)
8541290010 
| Date | HS Code | Product Description | Origin Country | Quantity | Unit | Net Weight | Total Value [USD] | Importer Name | Click to view 16 more columns 16 More Columns Available |
|---|---|---|---|---|---|---|---|---|---|
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -2sk3078 - 8 pieces; polvoyy, voltage: 10 v, current: 0.5 a; power: 3 vt.vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. not is the equipment or protective systems for use vvybuhonebezpechnomu environment. do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - toshiba semiconductorvyrobnyk - toshiba semiconductor. " | CHINA | ****** | UA100200 | 0.00 | 3.26 | ***** | 16 More Columns Available along with Company Name and Other Details etc. |
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -irfpe50pbf - 20 pieces; field; drain-source voltage: 800 v, drain current: 7.8 a, power: 190 watts. used in the manufacture telekomunikatsiynohoobladnannya, civil use. it is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - semiconductorsvyrobnyk vishay - vishay semiconductors. " | CHINA | ****** | UA100200 | 0.13 | 13.83 | ***** | |
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -irf1010npbf - 30 pcs, field, drain-source voltage of 55v, drain current 72a.potuzhnist scattering 130vt.- irf3205zpbf - 40 pcs, field, drain-source voltage 55v, 75a drain current, power dissipation 170vt. - irf530npbf - 100 pieces; field; napruhastik-source: 100v; current drain: 17a; power dissipation: 79vt. - irf7341trpbf- 100 pieces; field; drain-source voltage of 55 v, current flow: 4, 7 a; power: 2w. - irf7389pbf - 200 pieces; field; current: 7, 3a, voltage 30v drain-source, power dissipation, 2, 5vt. - irf7416trpbf - 100 pieces; field; napruhast�-30v to-drain, drain current: -10a, power: 2, 5vt. - irf8313trpbf - 50 pieces; field; vytik30v-voltage drain, drain current: 9, 7a; power: 2w. - irf9z24npbf - 1000 pieces; field; power drain-source -55 v drain current: -12 a; power: 45w. - irfh5010tr2 - 40 pcs, field, drain-source voltage of 100 v, the drain current of 13 a; power: 3.6 watt. - irlb3813 - 50 pieces, field, h apruha drain-source 30 v, drain current of 260 a, 230 w power dissipation.�-irlml0030trpbf - 2500 pcs;�field;�power drain-source: 30v, drain current 5, 3a, power dissipation 1, 3vt.�- irlml0060trpbf - 3000 pcs;�field;�napruhastik-source: 60 v;�current drain: 2, 7a, power dissipation: 1.25 w.�-irlr2905trpbf - 200 pieces;�field;�power drain-source 16 v;�drain current: 42a, power dissipation of 110 watts.�- irlu024n - 40 pieces;�field;�power flow-vytik60v, 56a drain current.�powerful number scattering 42vt.�used inproduction telecommunications equipment, civilian purposes.�not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi.�do not have a membership transmitters or transmitters and a means pryymachiv.ne spetspryznachennya.krayina production - cntorhovelna mark - international rectifiervyrobnyk - international rectifier " | CHINA | ****** | UA100200 | 4.18 | 626.08 | ***** | |
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -fds4935a - 100 pieces; field; drain-source voltage of -30v, the drain current of 7a. potuzhnistrozsiyuvannya 2w. used in the manufacture of telecommunications equipment, civilian purposes. it is not equipment dlyazastosuvannya or protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - fairchild semiconductorvyrobnyk - fairchild semiconductor. " | CHINA | ****** | UA100200 | 0.03 | 10.34 | ***** | |
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -2sk2850 - 10 pieces; polvoyy, voltage: 900 v; current: 6 a, power: 125 vt.vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. it is not equipment or protective systems for use vvybuhonebezpechnomu environment. do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - electricvyrobnyk fuji - fuji electric. " | CHINA | ****** | UA100200 | 0.11 | 10.49 | ***** | |
| 18/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -irf2907zpbf - 116 pieces; field; voltage: 75 v, current 170 a, power: 330 vt.vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. it is not equipment or protective systems for use vvybuhonebezpechnomu environment. do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - international rectifiervyrobnyk - international rectifier. " | CHINA | ****** | UA125020 | 0.32 | 116.90 | ***** | |
| 18/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -stp50ne10 - 4 pieces; field; voltage: 100v; current: 50 a, power: 180 vt.vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. it is not equipment or protective systems for use vvybuhonebezpechnomu environment. do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - stmicroelectronicsvyrobnyk - stmicroelectronics. " | CHINA | ****** | UA125020 | 0.00 | 1.74 | ***** | |
| 12/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: - zvn4525gta - 1000 pieces, field, ha tensions power: 2.5 -10 v; typtranzystoru: n-channel. operating temperature: -55 to +150 c. . inproduction used telecommunications equipment, civilian purposes. no yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. do not have a membership transmitters or transmitters and a means pryymachiv.ne spetspryznachennya.krayina production - cntorhovelna mark - diodes inc / zetexvyrobnyk - diodes inc / zetex ". | CHINA | ****** | UA100290 | 0.37 | 278.56 | ***** | |
| 11/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: - ao4409 - 10 pieces, field, voltage: -30 v, current: -12.8 a; power: 2 vt.- aon6786 - 10 pieces; field ; voltage: 30 v, current 12 a, power: 83 vt.- aon7702 - 10 pieces, field, voltage: 3 0 v, current 37 a, power: 23 vt.vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. it is not equipment or protective systems for use vvybuhonebezpechnomu environment. do not have a membership aboperedavachiv transmitters and receivers. it is not a means spetspryznachennya.krayi�on production - cntorhovelna mark - alpha & omega semiconductor inc.vyrobnyk - alpha & omega semiconductor inc.. " | CHINA | ****** | UA125020 | 0.06 | 7.00 | ***** | |
| 11/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: - sp8m3fu6tb - 117 pieces; field; voltage: 30v, current: 4.5 a, power: 2vt.vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. it is not equipment or protective systems for use vvybuhonebezpechnomu environment. do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - rohm semiconductorvyrobnyk - rohm semiconductor. " | CHINA | ****** | UA125020 | 0.05 | 53.40 | ***** |
