Gal Import Data under HS Code 3818 of Russia Imports from Taiwan China
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Substrate monocrystalline gallium arsenide gaas (iii / v) with successive grown heteroepitaxial layers based on gallium arsenide compounds gaas (iii / v), used in production of the laser device.
Epitaxial plate consisting of a substrate gaas (gallium arsenide), doped silicon (si) (less than 0.003%) c applied layers algainp, doped si (silicon) and mg (magnesium) for use in electronics manufacturing in epitaxial plate (d
Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm made gallium arsenide (gaas), on whose surface apply epitaxial heterostructures from thin layers of gallium arsenide (gaas) and aluminum arsenide gallium (: al