Engine Trade Data of Russia Imports under HS Code 8541290000

Get engine trade data of Russia imports under HS code 8541290000. Check Russia trade statistics of engine imports under HS code 8541290000 with market share and size, price, name of trade partners etc.

 
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17 Shipments Records (Demo)

8541290000  
DateHS CodeProduct DescriptionCountryTrademarkQuantityUnitNet WeightTotal Value [USD] Importer Name
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27/Nov/20178541290000Npn-type mos transistor. voltage rjkktrnj-'vbnnth 80b. power dissipation 30w. dimensions: 9.9 x 4.5 x 15.7mm. series bd239primenyaetsya in electrical engineering***FAIRCHILD150PC0.1237,12 ***** 84 More Columns Available along with Company Name and Other Details etc.
29/Sep/20178541290000Semiconductor transistors, not assembled in modules and nevmontirovannye to panel, repair electrical system in knots and aggregates, rec / of building engineering "komatsu" not intended for use on public roads, new: transistor komJAPAN***0,64KG0.64189,55 *****
27/Sep/20178541290000Transistor modules. transistor modules - based on igbt-transistors. designed for high switching power in the composition drive electric engine and static converters. for use in inverters, circuit breaker andCOSTA RICA***174,99KG174.9935145,93 *****
19/Sep/20178541290000Igbt transistors for speed control traction motor. 1000 v, current 800 a, dim800dcm17-a076 - 14sht at a price of 341 $ / pcs; apply for repair ecu traction engine manufacturer: "dynex": fet transistor dynexCHINA***12,6KG12.604,774 *****
13/Sep/20178541290000Semiconductor transistors for gain. generating and converting electrical signals into engineering. type semiconductor - germanium dioxide (geo2). power dissipation 125 bt: semiconductor transistors for gain. generation and preUNITED STATES***0,05KG0.051,52 *****
11/Sep/20178541290000Transistors, phototransistor also used in universal inverter servo drives and other controllers engines***"SEMIPACK"******79.9028635,55 *****
11/Sep/20178541290000Transistors, phototransistor also used in universal inverter servo drives and other controllers engines transistor devices - intellectual the igbt power modules, solid state, for voltage up to 1200 v, 300 a power supplyCHINA***174KG17455439,2 *****
08/Sep/20178541290000Semiconductors: field moptranzistory insulated gate with a maximum power dissipation 100bt, series 2sk1317; intended for use in dc-dc converter, in the driver engines, 2sk1317-e regulator;TAIWAN CHINA***10KG104305,7 *****
05/Sep/20178541290000Transistors, except phototransistor power dissipation 1 w: power module igbt (transistor) for frequency conversion ac eektrotoka in engines, electrical priborahmoschnost dispersion 1.3 kw, the maximum voltage collectJAPAN***87,76KG87.7625691,28 *****
01/Sep/20178541290000Transistor model "2n2907a" - 1600 pcs. the product is silicon pnp transistor small signal. maximum power dissipation 1.8 tues. current collector - 0.6 a, voltage - 60v. engineered products made in the case for: m surfaceISRAEL***0,57***0.571940,77 *****
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