27/Nov/2017 | 8541290000 | Npn-type mos transistor. voltage rjkktrnj-'vbnnth 80b. power dissipation 30w. dimensions: 9.9 x 4.5 x 15.7mm. series bd239primenyaetsya in electrical engineering | *** | FAIRCHILD | 150 | PC | 0.12 | 37,12 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
29/Sep/2017 | 8541290000 | Semiconductor transistors, not assembled in modules and nevmontirovannye to panel, repair electrical system in knots and aggregates, rec / of building engineering "komatsu" not intended for use on public roads, new: transistor kom | JAPAN | *** | 0,64 | KG | 0.64 | 189,55 | ***** |
27/Sep/2017 | 8541290000 | Transistor modules. transistor modules - based on igbt-transistors. designed for high switching power in the composition drive electric engine and static converters. for use in inverters, circuit breaker and | COSTA RICA | *** | 174,99 | KG | 174.99 | 35145,93 | ***** |
19/Sep/2017 | 8541290000 | Igbt transistors for speed control traction motor. 1000 v, current 800 a, dim800dcm17-a076 - 14sht at a price of 341 $ / pcs; apply for repair ecu traction engine manufacturer: "dynex": fet transistor dynex | CHINA | *** | 12,6 | KG | 12.60 | 4,774 | ***** |
13/Sep/2017 | 8541290000 | Semiconductor transistors for gain. generating and converting electrical signals into engineering. type semiconductor - germanium dioxide (geo2). power dissipation 125 bt: semiconductor transistors for gain. generation and pre | UNITED STATES | *** | 0,05 | KG | 0.05 | 1,52 | ***** |
11/Sep/2017 | 8541290000 | Transistors, phototransistor also used in universal inverter servo drives and other controllers engines | *** | "SEMIPACK" | *** | *** | 79.90 | 28635,55 | ***** |
11/Sep/2017 | 8541290000 | Transistors, phototransistor also used in universal inverter servo drives and other controllers engines transistor devices - intellectual the igbt power modules, solid state, for voltage up to 1200 v, 300 a power supply | CHINA | *** | 174 | KG | 174 | 55439,2 | ***** |
08/Sep/2017 | 8541290000 | Semiconductors: field moptranzistory insulated gate with a maximum power dissipation 100bt, series 2sk1317; intended for use in dc-dc converter, in the driver engines, 2sk1317-e regulator; | TAIWAN CHINA | *** | 10 | KG | 10 | 4305,7 | ***** |
05/Sep/2017 | 8541290000 | Transistors, except phototransistor power dissipation 1 w: power module igbt (transistor) for frequency conversion ac eektrotoka in engines, electrical priborahmoschnost dispersion 1.3 kw, the maximum voltage collect | JAPAN | *** | 87,76 | KG | 87.76 | 25691,28 | ***** |
01/Sep/2017 | 8541290000 | Transistor model "2n2907a" - 1600 pcs. the product is silicon pnp transistor small signal. maximum power dissipation 1.8 tues. current collector - 0.6 a, voltage - 60v. engineered products made in the case for: m surface | ISRAEL | *** | 0,57 | *** | 0.57 | 1940,77 | ***** |