29/Nov/2017 | 8541290000 | Trahzistory is mounted on the printed circuit board is used for surface mounting in switching equipment to create the necessary level of tension in electric tsepyah.ne are photoresistor. | CHINA | JOTRIN ELECTRONICS | 8,000 | PC | 21.94 | 2428,88 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
28/Nov/2017 | 8541290000 | Transistors purpose. designed for use in amplifiers and generators of electronic devices. power dissipation 10v not military. have encryption means (cryptography) total 5360 pcs. | CHINA | ABSENT | 5,360 | PC | 5.36 | 1606,1 | ***** |
23/Nov/2017 | 8541290000 | Transistors, power dissipation more 1w; do not contain radio electronic facilities and high frequency devices; civil, not for automatic fire | CHINA | STMICROELECTRONICS | 4,000 | PC | 31 | 7777,16 | ***** |
23/Nov/2017 | 8541290000 | A field effect transistor is an electronic key in the switching power supply, inverter, in a control system of electric drive. 600v | CHINA | TRADEMARK NO | 30,000 | PC | 9.14 | 2716,56 | ***** |
16/Nov/2017 | 8541290000 | Semiconductor transistors power dissipation 1 w, for mounting on printed circuit boards for use in radio electronics, shall create electromagnetic interference: | CHINA | IOR | 200 | PC | 0.01 | 20,13 | ***** |
06/Nov/2017 | 8541290000 | Transistors power dissipation 1 w, except phototransistor, for telecommunications equipment that is not yavl. crowbar electrical equipment, not yavl. radio electronic facilities and high frequency devices: china | CHINA | HUAWEI | 16 | PC | 0.02 | 0,66 | ***** |
29/Sep/2017 | 8541290000 | Fet transistor semiconductor power dissipation 190vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric). packed in a plastic container transistor semiconductor power ra | CHINA | *** | 3,75 | KG | 3.75 | 745,96 | ***** |
29/Sep/2017 | 8541290000 | Other transistors, phototransistor except: mosfets with channel n type intended for devices of industrial electronics. voltage drain-source breakdown 12.5, current leakage 50 ma, output 3w. case 8-powervdfn. located on the tape, i | CHINA | *** | 0,01 | KG | 0.01 | 44,89 | ***** |
29/Sep/2017 | 8541290000 | Transistors except phototransistors used in the system industrial electronics mosfet channel transistor p / n is used for the industrial electronics devices. breakdown voltage of the source-drain 60, leakage current 0.36 a power 1w. ko | CHINA | *** | 0,38 | KG | 0.38 | 60,1 | ***** |
29/Sep/2017 | 8541290000 | Semiconductor transistors power dissipation 1w more systems for industrial electronics: bipolar transistors are single, free rate, power dissipation 45w article irfz24npbf-1500sht. : infineon technologies absent 0 | CHINA | *** | 5,25 | KG | 5.25 | 278,58 | ***** |