Electronic Import Data under HS Code 8541290000 of Russia Imports from China

Search electronic import data under HS Code 8541290000 of Russia imports from China. View import statistics and market analysis report of electronic under HS Code 8541290000 which Russia imports from China

 
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272 Shipments Records (Demo)

8541290000   China  
DateHS CodeProduct DescriptionCountryTrademarkQuantityUnitNet WeightTotal Value [USD] Importer Name
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29/Nov/20178541290000Trahzistory is mounted on the printed circuit board is used for surface mounting in switching equipment to create the necessary level of tension in electric tsepyah.ne are photoresistor.CHINAJOTRIN ELECTRONICS8,000PC21.942428,88 ***** 84 More Columns Available along with Company Name and Other Details etc.
28/Nov/20178541290000Transistors purpose. designed for use in amplifiers and generators of electronic devices. power dissipation 10v not military. have encryption means (cryptography) total 5360 pcs.CHINAABSENT5,360PC5.361606,1 *****
23/Nov/20178541290000Transistors, power dissipation more 1w; do not contain radio electronic facilities and high frequency devices; civil, not for automatic fireCHINASTMICROELECTRONICS4,000PC317777,16 *****
23/Nov/20178541290000A field effect transistor is an electronic key in the switching power supply, inverter, in a control system of electric drive. 600vCHINATRADEMARK NO30,000PC9.142716,56 *****
16/Nov/20178541290000Semiconductor transistors power dissipation 1 w, for mounting on printed circuit boards for use in radio electronics, shall create electromagnetic interference:CHINAIOR200PC0.0120,13 *****
06/Nov/20178541290000Transistors power dissipation 1 w, except phototransistor, for telecommunications equipment that is not yavl. crowbar electrical equipment, not yavl. radio electronic facilities and high frequency devices: chinaCHINAHUAWEI16PC0.020,66 *****
29/Sep/20178541290000Fet transistor semiconductor power dissipation 190vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric). packed in a plastic container transistor semiconductor power raCHINA***3,75KG3.75745,96 *****
29/Sep/20178541290000Other transistors, phototransistor except: mosfets with channel n type intended for devices of industrial electronics. voltage drain-source breakdown 12.5, current leakage 50 ma, output 3w. case 8-powervdfn. located on the tape, iCHINA***0,01KG0.0144,89 *****
29/Sep/20178541290000Transistors except phototransistors used in the system industrial electronics mosfet channel transistor p / n is used for the industrial electronics devices. breakdown voltage of the source-drain 60, leakage current 0.36 a power 1w. koCHINA***0,38KG0.3860,1 *****
29/Sep/20178541290000Semiconductor transistors power dissipation 1w more systems for industrial electronics: bipolar transistors are single, free rate, power dissipation 45w article irfz24npbf-1500sht. : infineon technologies absent 0CHINA***5,25KG5.25278,58 *****
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