30/Nov/2017 | 8541210000 | Fets pn-junction, power dissipation 0.25 bt model bft46, part bft46, 215 - 21000 pcs. not scrap electric, do not waste. data products are used in telecommunications equipment for voltage limitation. individuals | CHINA | NXP SEMICONDUCTORS | 21,000 | PC | 1.23 | 2,394 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
30/Nov/2017 | 8541210000 | Transistors / except phototransistor dissipation of less than 1w /, / not scrap electrical equipment, not for military purposes, not for train / railway / suitable for printed circuit board: | CHINA | FAIRCHILD | 10 | PC | 0.01 | 0,3 | ***** |
30/Nov/2017 | 8541210000 | Transistors, except phototransistor power dissipation less than 1 w, (not scrap electric) classification code 63 4012, sm. addition. | *** | NEXPERIA BV | 210 | PC | 0.01 | 30,13 | ***** |
30/Nov/2017 | 8541210000 | Bipolar transistors, for use in telecommunications equipment, are not electric crowbar. industrial applications. new. goods are packed in special shock-resistant packaging. | *** | COMCHIP TECHNOLOGY | 200 | PC | 0.05 | 30,06 | ***** |
30/Nov/2017 | 8541210000 | Transistors with power dissipation less than 1w. (not scrap electric) | *** | WITHOUT A TRADEMARK | 100 | PC | 0.03 | 10,07 | ***** |
29/Nov/2017 | 8541210000 | Transistor / except phototransistor dissipation of less than 1w, not scrap electrical equipment, not for military purposes, not for train / railway / suitable for printed circuit boards | *** | NEXPERIA | 3,000 | PC | 0.28 | 178,46 | ***** |
29/Nov/2017 | 8541210000 | Bipolar transistors, power dissipation of 200 mw, 60 v, semiconductor - silicon is intended for the generation and amplification of electrical oscillations, | *** | MICRO, UNITED STATES | 5 | PC | 0.00 | 1,17 | ***** |
29/Nov/2017 | 8541210000 | Transistor semiconductor c power dissipation 0.36 bt type semiconductor - single-element, is designed to control the current in an electric circuit. model bss138_sb9g001 art: a2c00000609 - 21000 pcs | *** | FAIRCHILD | 21,000 | PC | 1.00 | 332,94 | ***** |
28/Nov/2017 | 8541210000 | Bipolar transistors, power dissipation of 250 mw, voltage 300 v, semiconductor - silicon is intended for the generation and amplification of electrical oscillations, | *** | NEXPERIA, MALAYSIA | 306 | PC | 0.26 | 19,96 | ***** |
24/Nov/2017 | 8541210000 | Silicon transistors c dissipation of less than 1w for electronics and electrical various purposes, | *** | "ON SEMICONDUCTOR" | 765,000 | PC | 6.26 | 12,354 | ***** |