27/Nov/2017 | 3818009000 | Semiconductor substrate for manufacturing geteroepieaksialnyh structure in the form of discs, alloy intended for use in the electronic and semiconductor industry | *** | FREIBERGER COMPOUND | *** | *** | 39 | 48434,19 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
20/Nov/2017 | 3818009000 | Substrate monocrystalline gallium arsenide gaas (iii / v) with successive grown heteroepitaxial layers based on gallium arsenide compounds gaas (iii / v), used in production of the laser device. | TAIWAN CHINA | ABSENT | *** | *** | 0.90 | 39,600 | ***** |
15/Nov/2017 | 3818009000 | Chemical compounds alloy: ingots gaas monocrystalline gaas (gallium and arsenic desired quantity ratio) | SLOVAKIA | CMK | *** | *** | 0.52 | 2958,2 | ***** |
08/Nov/2017 | 3818009000 | Chemical compounds doped for use in electronics - epitaxial wafers: 2-inch green ingan, wavelength 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 mcd - 2 pcs. epitaxial cm. complete | CHINA | ABSENT | *** | *** | 0.16 | 1162,07 | ***** |
01/Sep/2017 | 3818009000 | Single crystal plate high resistivity gallium arsenide compensate chrome (gaas: cr), not polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) registration:: :::: | RUSSIA | *** | 1,5 | *** | 1.50 | 2385,26 | ***** |