30/Nov/2017 | 8541290000 | Transistor designed for use telecommunications equipment for surface mounting on circuit boards | *** | ON SEMICONDUCTOR / FAIRCHILD | 100 | PC | 0.04 | 153,79 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
30/Nov/2017 | 8541290000 | Semiconductor transistors power dissipation 1 w, for mounting on printed circuit boards for use in radio electronics, shall create electromagnetic interference: | *** | ATMEL | 922 | PC | 0.80 | 18,44 | ***** |
27/Nov/2017 | 8541290000 | Trazistory semiconductor, dispersion over power 1w: n-channel field effect unipolar mos transistor gigamos power mosfet; power dissipation 1390vt; type semiconductor - silicon, used for the surface mounting on circuit boards | *** | IXYS | 80 | PC | 0.80 | 510,07 | ***** |
20/Nov/2017 | 8541290000 | Transistors, phototransistor except: semiconductor transistor type semiconductor - silicon for use in the production of circuit boards, power dissipation 1350vt. voltage 50v dc | *** | MACOM | 2 | PC | 0.02 | 69,52 | ***** |
30/Sep/2017 | 8541290000 | Semiconductor transistors dissipation of 1 w, for mounting on printed circuit boards, for use in radio electronic apparatus create electromagnetic interference: field insulated gate, p-channel available power dissipation 2.5 | TAIWAN CHINA | *** | 0,18 | KG | 0.18 | 4,14 | ***** |
30/Sep/2017 | 8541290000 | Semiconductor transistors power dissipation 1 w, for mounting on printed circuit boards for use in electronic equipment, shall create electromagnetic interference: field insulated gate, n-channel, power dissipation of 250 w | TAIWAN CHINA | *** | 0,05 | KG | 0.05 | 28 | ***** |
28/Sep/2017 | 8541290000 | Transistors, phototransistor except: semiconductor transistor type semiconductor - silicon for use in the production of circuit boards, power dissipation 4 w: on semiconductor ons ons ohyjuplk452 no 50 | CHINA | *** | 0,09 | KG | 0.09 | 2,06 | ***** |
25/Sep/2017 | 8541290000 | Transistor designed for use in telecommunications equipment for mounting on circuit boards n-channel mos key for mounting to pay, the maximum drain current of 12 a, power dissipation 15, 6 vt, temperature range -55 + 150c not elect jom | CHINA | *** | 0,01 | KG | 0.01 | 7,26 | ***** |
25/Sep/2017 | 8541290000 | Transistor designed for use in telecommunications equipment for mounting on circuit boards n-channel mos transistor, the dissipated power 115 w, casing dpak-3 process temperature -55-150 � c international rectifier international rectifier inter | CHINA | *** | 0,23 | KG | 0.23 | 238,65 | ***** |
25/Sep/2017 | 8541290000 | Transistors, phototransistor except: semiconductor transistor, semiconductor type - silicon for use in the production of circuit boards, power dissipation 4 w: on semiconductor ons ons s901-96687v no 1140 | CHINA | *** | 0,91 | KG | 0.91 | 20,49 | ***** |