30/Nov/2017 | 8541100009 | Power diodes in a sealed ceramic-metal enclosure, designed to work in dc and ac various electric power common industrial technical installations frequencies up to 500 hz, as well as in semiconductor converters | UZBEKISTAN | ELECTROVIPRYAMITEL | 70 | PC | 20 | 3113,28 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
30/Nov/2017 | 8541100009 | Diode df253-1000-24-h4-n-15units. tu 3417-060-41687291-2012, diode module md3-660-16-a2-n-40pcs. tu 3417-030-41687291-2003. silicon material. operating temperature <125 degrees. from., | GERMANY | The uppercase E crossed-T | 55 | PC | 64.96 | 4510,63 | ***** |
30/Nov/2017 | 8541100009 | Diode d066-12500-4-n-54sht. tu3417-052-41687291-2011. material silicon. operating temperature <125 degrees. as used in semiconductor power converters and in power circuits industrial electrical devices | REPUBLIC OF ESTONIA | The uppercase E crossed-T | 54 | PC | 7.40 | 4601,19 | ***** |
30/Nov/2017 | 8541100009 | Diode d066-12500-4-n-6 pcs., tu3417-052-41687291-2011, -silicon material. operating temperature <125 degrees. c., is applied in an energy converter, as well as other dc and ac different power electrical installations | CHINA | The uppercase E crossed-T | 6 | PC | 0.90 | 30 | ***** |
29/Nov/2017 | 8541100009 | Diodes not electrical jom, civil purposes, not radio-electronic means having no encryption function (cryptography) intended for use as a component for repair of household appliances samsung. | UKRAINE | SAMSUNG | 3 | PC | 0.03 | 1,59 | ***** |
29/Nov/2017 | 8541100009 | Power ultrafast diodes across the inductive currents for the electronic unit voltage regulation: | UKRAINE | ABSENT | 110 | PC | 0.77 | 349,5 | ***** |
29/Nov/2017 | 8541100009 | Diodes georgia. a / m: bpv-7-100-02 diode bridge generator (at 4310) - 10, | UKRAINE | *** | 10 | PC | 3.72 | 123,05 | ***** |
29/Nov/2017 | 8541100009 | Diodes georgia. a / m: bpv-46-65-02 diode bridge generator (at 5320) - 40 pcs, | UKRAINE | *** | 40 | PC | 3.92 | 165,38 | ***** |
28/Nov/2017 | 8541100009 | Diode dl171-320-12-uhl2-20sht., muish.432411.001-04 tu (tu substitute 3417-017-41687291-2000) d133-400-38-uhl2-9sht., muish.432514.001 tu (tu substitute 3417- 004-41687291-98), the material - silicon, operating temperature <125 degrees. from., | UKRAINE | The uppercase E crossed-T | 29 | PC | 10.33 | 1063,71 | ***** |
24/Nov/2017 | 8541100009 | Diodes, semiconductor not scrap electrical, electronic lamps not for appliances samsung | KOREA REPUBLIC OF | SAMSUNG GALAXY S | 25 | PC | 0.05 | 0,25 | ***** |