29/Nov/2017 | 8541290000 | Transistors not electrical jom, civil purposes, not radio-electronic means having no encryption function (cryptography) intended for use as a component for repair of household appliances samsung. | UKRAINE | SAMSUNG | 6 | PC | 0.10 | 6 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
28/Nov/2017 | 8541290000 | Module igbt mifa-hb12fa-150n-12p. tu 3417-065-41687291-2016. designed for switching heavy loads and used as part of the inverter and the electric motor power of low and medium power. | UKRAINE | The uppercase E crossed-T | 12 | PC | 2.04 | 433,74 | ***** |
27/Nov/2017 | 8541290000 | Power transistors, power 70 tues. to strengthen and control of electrical signaled. device intended for amplifying, oscillating or frequency conversion electric currents. it is a powerful mosfet. transistors based on mos-st | REPUBLIC OF ESTONIA | STMICROELECTRONICS | 92,500 | PC | 54.70 | 17859,29 | ***** |
27/Nov/2017 | 8541290000 | Sborka.sborka transistor comprises a transistor designed for operation in the frequency range up to 1mhz (0, 001ggts) | GERMANY | WITHOUT A TRADEMARK | 26 | PC | 1.50 | 9239,1 | ***** |
24/Nov/2017 | 8541290000 | Transistors, solid-state, power dissipation 1 w, not scrap, not for f / a transportation not for radiation of non medical naznachenichya for appliances samsung | KOREA REPUBLIC OF | SAMSUNG GALAXY S | 1 | PC | 0.01 | 0,01 | ***** |
24/Nov/2017 | 8541290000 | Transistor semiconductor power dissipation of 500w for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create a missile weapon not to create and arms | POLAND | VISH / IR | 35 | PC | 0.13 | 44,45 | ***** |
20/Nov/2017 | 8541290000 | Bipolar transistor silicon pnp low frequency structure, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the current transistor 4mhz, for industrial applications: 2t836a | REPUBLIC OF INDIA | Fine "Elter" | 400 | PC | 0.38 | 703,22 | ***** |
13/Nov/2017 | 8541290000 | Transistor semiconductor dissipation of 110w for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create weapons and military equipment). packed in shining | POLAND | INFIN | 175 | PC | 0.36 | 64,75 | ***** |
08/Nov/2017 | 8541290000 | 5.2 property according to the list № 11430.1781: ref. for persons. 49 transistor p210sh - 18 pcs. transistor germanium alloyed universal low frequency high power, 64b maximum voltage, maximum power dissipation 1.5w. apply | REPUBLIC OF INDIA | IZOBRAITELNY mark of JSC "Plant GAMMA" | 18 | PC | 0.68 | 372,61 | ***** |
03/Nov/2017 | 8541290000 | Transistors, phototransistor except not scrap electric equipment for repair and maintenance equipment company nikoncm. addition | KINGDOM OF THE NETHERLANDS | NIKON | 1 | PC | 0.00 | 15,62 | ***** |