20/Nov/2017 | 8541290000 | Bipolar transistor silicon pnp low frequency structure, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the current transistor 4mhz, for industrial applications: 2t836a | REPUBLIC OF INDIA | Fine "Elter" | 400 | PC | 0.38 | 703,22 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
08/Nov/2017 | 8541290000 | 5.2 property according to the list № 11430.1781: ref. for persons. 49 transistor p210sh - 18 pcs. transistor germanium alloyed universal low frequency high power, 64b maximum voltage, maximum power dissipation 1.5w. apply | REPUBLIC OF INDIA | IZOBRAITELNY mark of JSC "Plant GAMMA" | 18 | PC | 0.68 | 372,61 | ***** |
03/Nov/2017 | 8541290000 | Npn silicon transistors mezaplanarny structures for a switching device and a power supply constant power dissipation is 50w, for industrial applications: 2t839a | REPUBLIC OF INDIA | Fine "Elter" | 10 | PC | 0.15 | 84,59 | ***** |