30/Nov/2017 | 8541290000 | Npn silicon transistors mezaplanarnye structure for work in electronic equipment, maximum power dissipation 50w, for industrial applications: | PEOPLE'S REPUBLIC OF VIETNAM | Fine "BETA ELECTRONICS" | 59 | PC | 1.74 | 61,54 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
27/Nov/2017 | 8541290000 | Sborka.sborka transistor comprises a transistor designed for operation in the frequency range up to 1mhz (0, 001ggts) | GERMANY | WITHOUT A TRADEMARK | 26 | PC | 1.50 | 9239,1 | ***** |
20/Nov/2017 | 8541290000 | Bipolar transistor silicon pnp low frequency structure, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the current transistor 4mhz, for industrial applications: 2t836a | REPUBLIC OF INDIA | Fine "Elter" | 400 | PC | 0.38 | 703,22 | ***** |
13/Nov/2017 | 8541290000 | Transistor semiconductor dissipation of 110w for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create weapons and military equipment). packed in shining | POLAND | INFIN | 175 | PC | 0.36 | 64,75 | ***** |
09/Nov/2017 | 8541290000 | Module for semiconductor igbt transistors industrial electronic equipment. type semiconductor - single-element (silicon) (not scrap electric) | POLAND | SMK | 4 | PC | 1.30 | 419,56 | ***** |
08/Nov/2017 | 8541290000 | 5.2 property according to the list № 11430.1781: ref. for persons. 49 transistor p210sh - 18 pcs. transistor germanium alloyed universal low frequency high power, 64b maximum voltage, maximum power dissipation 1.5w. apply | REPUBLIC OF INDIA | IZOBRAITELNY mark of JSC "Plant GAMMA" | 18 | PC | 0.68 | 372,61 | ***** |
03/Nov/2017 | 8541290000 | Transistors, phototransistor except not scrap electric equipment for repair and maintenance equipment company nikoncm. addition | KINGDOM OF THE NETHERLANDS | NIKON | 1 | PC | 0.00 | 15,62 | ***** |
26/Sep/2017 | 8541290000 | Kat.pvn 4.2 matrix transistor 1nt251 i93.456.000 tu col.2 pcs poz.1.38 list for № 2 silicon epitaxial planetary-npn transistor matrix (assembly) the metal packages, prednaznochennaya for use in radio apparatus c: am | RUSSIA | *** | 0,02 | KG | 0.02 | 150,97 | ***** |
22/Sep/2017 | 8541290000 | Npn silicon transistors with transition from the output power of at least 25w, operating speed more 3mhz are designed to amplify signals in electrical equipment: transistor ltd. "saransk plant of precision instruments" sztp not the absence | RUSSIA | *** | 0,3 | KG | 0.30 | 51,52 | ***** |
22/Sep/2017 | 8541290000 | Transistor semiconductor power dissipation 68vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric). do not mark. at upak. 125-44127016 transistor semiconductor power dissipation 34, 5vt for | RUSSIA | *** | 5,68 | KG | 5.68 | 1350,16 | ***** |