30/Nov/2017 | 8541300009 | Thyristor t253-500-65-n-80sht. tu3417-042-41687291-2008. material silicon. operating temperature <125 degrees. s., slew rate enable current <4a / iss applied in power converter, as well as other chains | REPUBLIC OF ESTONIA | The uppercase E crossed-T | 80 | PC | 42.80 | 10615,9 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
30/Nov/2017 | 8541100009 | Diode d066-12500-4-n-54sht. tu3417-052-41687291-2011. material silicon. operating temperature <125 degrees. as used in semiconductor power converters and in power circuits industrial electrical devices | REPUBLIC OF ESTONIA | The uppercase E crossed-T | 54 | PC | 7.40 | 4601,19 | ***** |
30/Nov/2017 | 8541100009 | Diod overhead 200-12- silicon avalanche diodes for voltage stabilization | REPUBLIC OF ESTONIA | ASTRA ELECTRO | 100 | PC | 50 | 2248,71 | ***** |
27/Nov/2017 | 8541290000 | Power transistors, power 70 tues. to strengthen and control of electrical signaled. device intended for amplifying, oscillating or frequency conversion electric currents. it is a powerful mosfet. transistors based on mos-st | REPUBLIC OF ESTONIA | STMICROELECTRONICS | 92,500 | PC | 54.70 | 17859,29 | ***** |
24/Nov/2017 | 8541300009 | Thyristor: t553-800-44-n-10pc. tu3417-042-41687291-2008., t161-160-10-42-n-250sht., tu3417-053-41687291- 2012. tfi175-200-14-a2p3-n-30pcs, tu3417-048-41687291-2010. , tfi273-2000-20-a2k3-n-8 pieces. tu3417-045-41687291-2008. thyristor modules mt1-765-24-e | REPUBLIC OF ESTONIA | The uppercase E crossed-T | 363 | PC | 232.42 | 17627,9 | ***** |
24/Nov/2017 | 8541100009 | Diode assembly with cooler dl153-1250-34-nc o153-150-3-63sht. diode dl161-200-13-n-250sht. tu3417-058-41687291-2012., d161-400x-16-xn-288sht. tu3417-055-41687291-2012. d253-1600-22-n-24sht. tu3417-044-41687291-2008. | REPUBLIC OF ESTONIA | The uppercase E crossed-T | 637 | PC | 641.84 | 39640,03 | ***** |
24/Nov/2017 | 8541409000 | Optocouplers 039k10 aot128a-1000pcs. otptron with transistor output in a plastic case for surface mounting. it consists of a crystal ir led and a silicon phototransistor. material silicon and gallium arsenide. not contain components | REPUBLIC OF ESTONIA | *** | 1,000 | PC | 1.10 | 354,99 | ***** |