Ukraine Trade Data of 2w Imports Under HS Code 8541

Lookup Ukraine trade data of 2w imports under HS code 8541. Check Ukraine import trading parters of 2w

 
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14 Shipments Records (Demo)

8541  
DateHS CodeProduct DescriptionOrigin CountryQuantityUnitNet WeightTotal Value [USD] Importer Name
26/Apr/20178541401000"1-laser diode: -cm-a64-2000-150, cm 1064 + - 5nm, 2w, 100um -50 sht.lazerni diode used for own production needs production laser module (aah�.941613.100-00, 01, 02, 03, 04) "" coagulator laser universal "" lika surgeon "" (aah�.941613.000) tu 33.1-24411216-001: 2005 and laser modules (aah�.941613.700-00, 01, 02, 03, 04) "" laser coagulator universal "" lika surgeon m '' (aah�.941613.600) tu 32.5-24411216-005: 2012 that laser radiation from optical fiber is transferred from the product to the laser diode patsiyenta.v designation: "" cm-a64-2000 -150 cm, 1064 + - 5nm, 2w, 100um "", "" cm "" - c-mount type freestanding servomotor�tion; "" a64 "" - wavelength 1064nm radiation generation "" 2000 "" -2w power generation radiation, "" 150 "" - "" 1 "" -100um radiation exodus, "" 5 "" - + - 5nm entry of wavelength, "" 0 "" additional options no. diodes be used for own industrial production of goods potreb.krayina us, us. producers of goods sheaumann laser, inc.�torhive lna mark sheaumann. "UNITED STATES******UA9020500.036,678.88 ***** 16 More Columns Available along with Company Name and Other Details etc.
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -irf1010npbf - 30 pcs, field, drain-source voltage of 55v, drain current 72a.potuzhnist scattering 130vt.- irf3205zpbf - 40 pcs, field, drain-source voltage 55v, 75a drain current, power dissipation 170vt. - irf530npbf - 100 pieces; field; napruhastik-source: 100v; current drain: 17a; power dissipation: 79vt. - irf7341trpbf- 100 pieces; field; drain-source voltage of 55 v, current flow: 4, 7 a; power: 2w. - irf7389pbf - 200 pieces; field; current: 7, 3a, voltage 30v drain-source, power dissipation, 2, 5vt. - irf7416trpbf - 100 pieces; field; napruhast�-30v to-drain, drain current: -10a, power: 2, 5vt. - irf8313trpbf - 50 pieces; field; vytik30v-voltage drain, drain current: 9, 7a; power: 2w. - irf9z24npbf - 1000 pieces; field; power drain-source -55 v drain current: -12 a; power: 45w. - irfh5010tr2 - 40 pcs, field, drain-source voltage of 100 v, the drain current of 13 a; power: 3.6 watt. - irlb3813 - 50 pieces, field, h apruha drain-source 30 v, drain current of 260 a, 230 w power dissipation.�-irlml0030trpbf - 2500 pcs;�field;�power drain-source: 30v, drain current 5, 3a, power dissipation 1, 3vt.�- irlml0060trpbf - 3000 pcs;�field;�napruhastik-source: 60 v;�current drain: 2, 7a, power dissipation: 1.25 w.�-irlr2905trpbf - 200 pieces;�field;�power drain-source 16 v;�drain current: 42a, power dissipation of 110 watts.�- irlu024n - 40 pieces;�field;�power flow-vytik60v, 56a drain current.�powerful number scattering 42vt.�used inproduction telecommunications equipment, civilian purposes.�not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi.�do not have a membership transmitters or transmitters and a means pryymachiv.ne spetspryznachennya.krayina production - cntorhovelna mark - international rectifiervyrobnyk - international rectifier "CHINA******UA1002004.18626.08 *****
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -fds4935a - 100 pieces; field; drain-source voltage of -30v, the drain current of 7a. potuzhnistrozsiyuvannya 2w. used in the manufacture of telecommunications equipment, civilian purposes. it is not equipment dlyazastosuvannya or protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - fairchild semiconductorvyrobnyk - fairchild semiconductor. "CHINA******UA1002000.0310.34 *****
26/Apr/201785412900901. bipolar transistors npn type scattering power 2w: art.�fzt653ta - 52sht, bipolar transistors pnp-type of scattering power 2w: art.�fzt753ta - 1095sht.dlya civil industrial electronics.�manufacturer - diodes inc./zetex, trademark - diodes inc./zetex.�.N/A******UA1250200.23156.70 *****
18/Apr/201785412900901.tranzystory field for civilian electronics industry with potuzhnistyurozsiyuvannya 2w: irf7342pbf -570sht.torhovelna brand: international rectifiervyrobnyk: international rectifier.CHINA******UA1002900.11117.99 *****
14/Apr/201785412900901.tranzystory for civil electronics industry, -with power dissipation 2, 5vt: irf7240pbf -200sht.-2w of power dissipation: irf7304pbf -200sht., with power dissipation 38vt: irlr024npbf -105sht.torhovelna brand: infineonvyrobnyk: infineonkrayina production: my.MALAYSIA******UA1250600.10172.15 *****
13/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate, article: p1410bd -15000sht. 83vt power dissipation dc 49a; pk616ba -12000sht. 31vt power dissipation dc 50a; pa610nv -2500sht. 2w power dissipation, dc 2.5a. used in ignition internal combustion engines of automotive electronics. it is not military products. brand: niko semiconductor co., ltd. trade mark: nikos. country of origin: tw.. "TAIWAN******UA401010134,678.87 *****
13/Apr/201785412900901.tranzystory strong field, mos structure, p-channel (2w): art.�irf7304pbf - 1425sht.�for civil industrial electronics.�manufacturers - infineon technologies, trademark - infineon.�.N/A******UA1002900.24318.11 *****
10/Apr/201785412900901.tranzystory field for civilian electronics industry with potuzhnistyurozsiyuvannya 110vt and 2w: irfr5305pbf -6000sht.�irf7306pbf -380sht.torhovelna brand: infineon technologiesvyrobnyk: infineon technologies.N/A******UA1002903.791,371.62 *****
06/Apr/20178541100090"1.diodnyy bridge used in electronics at odds: 1) art. 2w10m (rectifier with current and voltage 1000v 2a) -62sht 2) art. mb6s (izstrumom rectifier 0, 5a 600v voltage and so on) -20sht, producer : master instrument corp.krayina production: cn.torhivelna brand: mic.. "CHINA******UA1250600.087.44 *****
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