27/Nov/2017 | 3818009000 | Semiconductor substrate for manufacturing geteroepieaksialnyh structure in the form of discs, alloy intended for use in the electronic and semiconductor industry | *** | FREIBERGER COMPOUND | *** | *** | 39 | 48434,19 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
27/Nov/2017 | 3818001000 | Silicon is alloyed in the form of a plate | UNITED STATES | ABSENT | *** | *** | 188.80 | 7164,57 | ***** |
22/Nov/2017 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, then | CHINA | ABSENT | *** | *** | 0.12 | 4,500 | ***** |
10/Nov/2017 | 3818001000 | Silicon is alloyed in the form of a plate for the manufacture of items that will be used as an electrode electron column optical lithography machines: | GERMANY | ABSENT | *** | *** | 4 | 6815,82 | ***** |
07/Nov/2017 | 3818009000 | Epitaxial structures alloyed, in the form of discs, for the manufacture of solar cells, the goods can be opened in the premises under sterile conditions class 8 and above: | GERMANY | ABSENT | *** | *** | 117.19 | 785461,67 | ***** |
29/Sep/2017 | 3818001000 | Silicon is alloyed with a disc-shaped, intended for use in electronics: the electrode in the form of a disc diameter of 8 "is used in etching of dielectric electronic devices lam at surface of the semiconductor silicon wafers lam material. kre | TAIWAN CHINA | *** | 7,44 | *** | 7.44 | 12575,52 | ***** |
05/Sep/2017 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm made gallium arsenide (gaas), on whose surface apply epitaxial heterostructures from thin layers of gallium arsenide (gaas) and aluminum arsenide gallium (: al | TAIWAN CHINA | *** | 0,68 | *** | 0.68 | 31394,35 | ***** |