27/Nov/2017 | 3818009000 | Semiconductor substrate for manufacturing geteroepieaksialnyh structure in the form of discs, alloy intended for use in the electronic and semiconductor industry | *** | FREIBERGER COMPOUND | *** | *** | 39 | 48434,19 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
21/Nov/2017 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; packed in tape / for 25 pcs / vacuum bags, cardboard, and pave the foam insert: | CHINA | MCL ELECTRONIC MATERIALS, LTD | *** | *** | 27.24 | 21,615 | ***** |
17/Nov/2017 | 3818009000 | Chemical compounds legirovannye: semiconductor substrate from indium phosphide, n-type, doped with sulfur to the circular plate, 3 inch diameter. used to build electronic equipment, for the subsequent manufacture of diodes and | *** | ABSENT | *** | *** | 0.09 | 1947,75 | ***** |
15/Nov/2017 | 3818001000 | Doped silicon for use in electronic production process devices and circuits: high purity silicon doped with boron, the ingot (1 piece), 4 '(111), 6k-17k ohm / cm, diameter 103 + _1, 00 mm, serial no 46 -0189-10, year | DENMARK | TOPSIL | *** | *** | 13.74 | 40725,06 | ***** |
15/Nov/2017 | 3818009000 | Chemical compounds alloy: ingots gaas monocrystalline gaas (gallium and arsenic desired quantity ratio) | SLOVAKIA | CMK | *** | *** | 0.52 | 2958,2 | ***** |
07/Nov/2017 | 3818009000 | Epitaxial structures alloyed, in the form of discs, for the manufacture of solar cells, the goods can be opened in the premises under sterile conditions class 8 and above: | GERMANY | ABSENT | *** | *** | 117.19 | 785461,67 | ***** |
20/Sep/2017 | 3818009000 | Molecular sieve from silicon, optical emission spectrometry icp optima 4300 the dv, used in studies of environmental, petrochemical, pharmaceutical areas not contain radioactive sources other than the crowbar and waste, not consumption | GERMANY | *** | 0,02 | *** | 0.02 | 355,97 | ***** |
05/Sep/2017 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm made gallium arsenide (gaas), on whose surface apply epitaxial heterostructures from thin layers of gallium arsenide (gaas) and aluminum arsenide gallium (: al | TAIWAN CHINA | *** | 0,68 | *** | 0.68 | 31394,35 | ***** |