And Trade Data of Russia Imports under HS Code 3818

Get and trade data of Russia imports under HS code 3818. Check Russia trade statistics of and imports under HS code 3818 with market share and size, price, name of trade partners etc.

 
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20 Shipments Records (Demo)

3818  
DateHS CodeProduct DescriptionCountryTrademarkQuantityUnitNet WeightTotal Value [USD] Importer Name
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27/Nov/20173818009000Semiconductor substrate for manufacturing geteroepieaksialnyh structure in the form of discs, alloy intended for use in the electronic and semiconductor industry***FREIBERGER COMPOUND******3948434,19 ***** 84 More Columns Available along with Company Name and Other Details etc.
21/Nov/20173818001000Silicon wafer polishing, doped monocrystalline, electronics; packed in tape / for 25 pcs / vacuum bags, cardboard, and pave the foam insert:CHINAMCL ELECTRONIC MATERIALS, LTD******27.2421,615 *****
17/Nov/20173818009000Chemical compounds legirovannye: semiconductor substrate from indium phosphide, n-type, doped with sulfur to the circular plate, 3 inch diameter. used to build electronic equipment, for the subsequent manufacture of diodes and***ABSENT******0.091947,75 *****
15/Nov/20173818001000Doped silicon for use in electronic production process devices and circuits: high purity silicon doped with boron, the ingot (1 piece), 4 '(111), 6k-17k ohm / cm, diameter 103 + _1, 00 mm, serial no 46 -0189-10, yearDENMARKTOPSIL******13.7440725,06 *****
15/Nov/20173818009000Chemical compounds alloy: ingots gaas monocrystalline gaas (gallium and arsenic desired quantity ratio)SLOVAKIACMK******0.522958,2 *****
07/Nov/20173818009000Epitaxial structures alloyed, in the form of discs, for the manufacture of solar cells, the goods can be opened in the premises under sterile conditions class 8 and above:GERMANYABSENT******117.19785461,67 *****
20/Sep/20173818009000Molecular sieve from silicon, optical emission spectrometry icp optima 4300 the dv, used in studies of environmental, petrochemical, pharmaceutical areas not contain radioactive sources other than the crowbar and waste, not consumptionGERMANY***0,02***0.02355,97 *****
05/Sep/20173818009000Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm made gallium arsenide (gaas), on whose surface apply epitaxial heterostructures from thin layers of gallium arsenide (gaas) and aluminum arsenide gallium (: alTAIWAN CHINA***0,68***0.6831394,35 *****
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