30/Nov/2017 | 8541100009 | Diode df253-1000-24-h4-n-15units. tu 3417-060-41687291-2012, diode module md3-660-16-a2-n-40pcs. tu 3417-030-41687291-2003. silicon material. operating temperature <125 degrees. from., | GERMANY | The uppercase E crossed-T | 55 | PC | 64.96 | 4510,63 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
30/Nov/2017 | 8541300009 | Thyristor t253-500-65-n-80sht. tu3417-042-41687291-2008. material silicon. operating temperature <125 degrees. s., slew rate enable current <4a / iss applied in power converter, as well as other chains | REPUBLIC OF ESTONIA | The uppercase E crossed-T | 80 | PC | 42.80 | 10615,9 | ***** |
30/Nov/2017 | 8541100009 | Diode d066-12500-4-n-54sht. tu3417-052-41687291-2011. material silicon. operating temperature <125 degrees. as used in semiconductor power converters and in power circuits industrial electrical devices | REPUBLIC OF ESTONIA | The uppercase E crossed-T | 54 | PC | 7.40 | 4601,19 | ***** |
30/Nov/2017 | 8541300009 | Thyristor t123-320-16-n-20pcs. tu 3417-042-41687291-2008, thyristor modules mt3-320-18-c1-n-2 pcs., tu3417-063-41687291-2014. mt3-1250-8-dn-48sht., the material-silicon. operating temperature <125 degrees. from., | JAPAN | The uppercase E crossed-T | 70 | PC | 199.28 | 11427,4 | ***** |
29/Nov/2017 | 8541401000 | Light emitting diodes not contain components of superconducting materials not lasers for use in domestic and industrial electrical products: | GEORGIA | IEK | 150 | PC | 3.47 | 111 | ***** |
28/Nov/2017 | 8541100009 | Diode dl171-320-12-uhl2-20sht., muish.432411.001-04 tu (tu substitute 3417-017-41687291-2000) d133-400-38-uhl2-9sht., muish.432514.001 tu (tu substitute 3417- 004-41687291-98), the material - silicon, operating temperature <125 degrees. from., | UKRAINE | The uppercase E crossed-T | 29 | PC | 10.33 | 1063,71 | ***** |
24/Nov/2017 | 8541409000 | Optocouplers 039k10 aot128a-1000pcs. otptron with transistor output in a plastic case for surface mounting. it consists of a crystal ir led and a silicon phototransistor. material silicon and gallium arsenide. not contain components | REPUBLIC OF ESTONIA | *** | 1,000 | PC | 1.10 | 354,99 | ***** |
24/Nov/2017 | 8541409000 | Crystal photomatrixes sc142-01 - 250000 sht.ne contain superconducting materialov.ispolzuyutsya as receiving part in various products: single photodetector, an optocoupler, point relay. | USA | ABSENT | 250,000 | PC | 0.64 | 13,750 | ***** |
09/Nov/2017 | 8541401000 | Leds designed for use as an emitter in optical devices at a wavelength of 1.9 mcm operates at thermoelectric cooling. power 0.6 mw. -not contain components made of superconducting materials; | CHINA | WITHOUT A TRADEMARK | 10 | PC | 0.10 | 2146,36 | ***** |
08/Nov/2017 | 8541210000 | 4.2 property in list № 171125-0895 from 15/09/17: transistor schu3.365.007tu 2t203g - 51 pcs; transistor zhk3.365.143tu 2t312b - 28 pcs; transistor zhk3.365.143tu 2t312v - 23 pcs; transistor yuf3.365.043tu 2t630b - 28 pcs; matrix transistor i93.456.000tu | REPUBLIC OF INDIA | Not labeled, RUSSIA | 429 | PC | 0.40 | 8275,49 | ***** |