Ukraine Trade Data of Voltage Imports Under HS Code 8541290010

Lookup Ukraine trade data of voltage imports under HS code 8541290010. Check Ukraine import trading parters of voltage

 
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38 Shipments Records (Demo)

8541290010  
DateHS CodeProduct DescriptionOrigin CountryQuantityUnitNet WeightTotal Value [USD] Importer Name
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -2sk3078 - 8 pieces; polvoyy, voltage: 10 v, current: 0.5 a; power: 3 vt.vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. not is the equipment or protective systems for use vvybuhonebezpechnomu environment. do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - toshiba semiconductorvyrobnyk - toshiba semiconductor. "CHINA******UA1002000.003.26 ***** 16 More Columns Available along with Company Name and Other Details etc.
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -irfpe50pbf - 20 pieces; field; drain-source voltage: 800 v, drain current: 7.8 a, power: 190 watts. used in the manufacture telekomunikatsiynohoobladnannya, civil use. it is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - semiconductorsvyrobnyk vishay - vishay semiconductors. "CHINA******UA1002000.1313.83 *****
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -irf1010npbf - 30 pcs, field, drain-source voltage of 55v, drain current 72a.potuzhnist scattering 130vt.- irf3205zpbf - 40 pcs, field, drain-source voltage 55v, 75a drain current, power dissipation 170vt. - irf530npbf - 100 pieces; field; napruhastik-source: 100v; current drain: 17a; power dissipation: 79vt. - irf7341trpbf- 100 pieces; field; drain-source voltage of 55 v, current flow: 4, 7 a; power: 2w. - irf7389pbf - 200 pieces; field; current: 7, 3a, voltage 30v drain-source, power dissipation, 2, 5vt. - irf7416trpbf - 100 pieces; field; napruhast�-30v to-drain, drain current: -10a, power: 2, 5vt. - irf8313trpbf - 50 pieces; field; vytik30v-voltage drain, drain current: 9, 7a; power: 2w. - irf9z24npbf - 1000 pieces; field; power drain-source -55 v drain current: -12 a; power: 45w. - irfh5010tr2 - 40 pcs, field, drain-source voltage of 100 v, the drain current of 13 a; power: 3.6 watt. - irlb3813 - 50 pieces, field, h apruha drain-source 30 v, drain current of 260 a, 230 w power dissipation.�-irlml0030trpbf - 2500 pcs;�field;�power drain-source: 30v, drain current 5, 3a, power dissipation 1, 3vt.�- irlml0060trpbf - 3000 pcs;�field;�napruhastik-source: 60 v;�current drain: 2, 7a, power dissipation: 1.25 w.�-irlr2905trpbf - 200 pieces;�field;�power drain-source 16 v;�drain current: 42a, power dissipation of 110 watts.�- irlu024n - 40 pieces;�field;�power flow-vytik60v, 56a drain current.�powerful number scattering 42vt.�used inproduction telecommunications equipment, civilian purposes.�not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi.�do not have a membership transmitters or transmitters and a means pryymachiv.ne spetspryznachennya.krayina production - cntorhovelna mark - international rectifiervyrobnyk - international rectifier "CHINA******UA1002004.18626.08 *****
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -fds4935a - 100 pieces; field; drain-source voltage of -30v, the drain current of 7a. potuzhnistrozsiyuvannya 2w. used in the manufacture of telecommunications equipment, civilian purposes. it is not equipment dlyazastosuvannya or protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - fairchild semiconductorvyrobnyk - fairchild semiconductor. "CHINA******UA1002000.0310.34 *****
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -2sk2850 - 10 pieces; polvoyy, voltage: 900 v; current: 6 a, power: 125 vt.vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. it is not equipment or protective systems for use vvybuhonebezpechnomu environment. do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - electricvyrobnyk fuji - fuji electric. "CHINA******UA1002000.1110.49 *****
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -tirlr2905 - 50 pieces; field; drain-source voltage of 16 v, drain current 42 a; power dissipation of 110 watts. vyrobnytstvitelekomunikatsiynoho used in equipment for civil use. it is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. it is not zasobomspetspryznachennya.krayina production - cntorhovelna mark - international rectifiervyrobnyk - international rectifier. "CHINA******UA1250200.0414.80 *****
26/Apr/20178541290010"1.napivprovidnykovi devices, powerful field transistors with insulated gate, supplied as spare parts for electrical cegelectramvaynoho car kit: -tranzystor ff900r123 ip4d, designed to control the traction motors, the nominal voltage - 1200v, rated current - 900a-10sht.vyrobnyk" " cegelec "" astorhovelna brand: cegeleckrayina production: cz. "N/A******UA20920024,792.79 *****
26/Apr/20178541290010"1. silicon transistors field powerful, n-channel, insulated gate: -tirf530 - 50 pieces; field; drain-source voltage: 100v, a drain current 17 a, power dissipation of 79 watts. vyrobnytstvitelekomunikatsiynoho used in equipment for civil use . it is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. it is not zasobomspetspryznachennya.krayina production - phtorhovelna mark - international rectifiervyrobnyk - international rectifier. "PHILIPPINES******UA1250200.1812.06 *****
25/Apr/20178541290010"1. transistor powerful field: - irf740 - 410 pcs. voltage - 400, current - 10 a, maximum frequency - 1 mhz power - 125 watts. made in the housing to-220ab 3 we derive. have shvydkyykomutatsiynyy time, improve ny shutter. used to switch sylovyhpryladiv and switching power is yvlennya. pryznachennya.torhivelna not military grade: "" ir "" company manufacturer: "" international rectifier corporation "" cn / china. "N/A******UA4030301.27156.64 *****
24/Apr/20178541290010"1. field transistor irf5803 p-kanalnyy- - 210 pieces voltage - 40 v; current - 3.4 a, 2 w power. made vkorpusi tsop-6. they have ultra low internal resistance, charge us zkyy zatvoru.zastosovuyetsya ba in taree and equipment that require regulated lyuvannyaelektrychnoho navantazhennya.torhivelna mark: "" ir "" company manufacturer: "" international rectifier corporation "" cn / china. "N/A******UA1002900.01179.58 *****
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