Ukraine Trade Data of Tec Imports Under HS Code 8541290010
Lookup Ukraine trade data of tec imports under HS code 8541290010. Check Ukraine import trading parters of tec
28 Shipments Records (Demo)
8541290010 
| Date | HS Code | Product Description | Origin Country | Quantity | Unit | Net Weight | Total Value [USD] | Importer Name | Click to view 16 more columns 16 More Columns Available |
|---|---|---|---|---|---|---|---|---|---|
| 28/Apr/2017 | 8541290010 | 1.tranzystory strong field, mos structure, n-channel (39vt): art.�irlr120npbf - 208sht.�for civil industrial electronics.�manufacturer - infineon technolpgies, trademark - infineon.�. | N/A | ****** | UA100200 | 0.07 | 48.19 | ***** | 16 More Columns Available along with Company Name and Other Details etc. |
| 27/Apr/2017 | 8541290010 | 1.tranzystory strong field, mos structure, n-channel, with scattering ability 2.8vt: art.�bsb280n15nz3 - 10pc.�for civil industrial electronics.�manufacturers - infineon technologies, trademark - infineon.�. | N/A | ****** | UA100230 | 0.01 | 18.04 | ***** | |
| 27/Apr/2017 | 8541290010 | 1.tranzystory strong field, mos structure, n-channel, with scattering ability 39vt: art.�ipa045n10n3 - 15sht, powerful field transistors, mos structure, n-channel, with scattering ability 40.5vt: art.�ipa105n15n3g - 10pc.�for civil industrial electronics.�manufacturers - infineon technologies, trademark - infineon.�. | N/A | ****** | UA100230 | 0.05 | 61.38 | ***** | |
| 27/Apr/2017 | 8541290010 | 1.tranzystory strong field, mon- structure, n-channel capacity 1, 3vt: art.�irlml2502trpbf - 6000sht.�for civil industrial electronics.�manufacturers - infineon technologies, trademark - infineon.�. | N/A | ****** | UA100290 | 0.12 | 307.84 | ***** | |
| 26/Apr/2017 | 8541290010 | 1.tranzystory strong field, mos structure, n-channel, with scattering ability 1.8vt: art.�bsp297h6327xtsa1 - 3pc.�for civil industrial electronics.�manufacturers - infineon technologies, trademark - infineon.�. | CHINA | ****** | UA100200 | 0.00 | 0.63 | ***** | |
| 26/Apr/2017 | 8541290010 | 1.tranzystor mos structure of n-channel i gbt-type applied dlyaperetvo rennie current in electrical circuits: art.ir g4pc50spbf (maks.potuzhnist200vt, eg hectares 600v, current 70a) -100sht.vyrobnyk: infenion technologies.krayina production: mx.torhivelna mark: infenion technologies. | MEXICO | ****** | UA100290 | 0.72 | 201.71 | ***** | |
| 26/Apr/2017 | 8541290010 | "1.tranzystory field powerful silicon, transistor blf571, 112 - 60 pieces; transistor blf184xru - 20 pieces, is a powerful high-fets created using ldmos - shifted diffuznoyi-mos technology based on silicon. used in band amplifier circuit dmx- , transmitters for digital production telebachennya.krayina ph trademark nxpvyrobnyk nxp semiconductors. " | PHILIPPINES | ****** | UA100290 | 1.50 | 4,490.53 | ***** | |
| 25/Apr/2017 | 8541290010 | 1.bipolyarnyy insulated gate transistor (igbt), power dissipation of 200w, art.�irg4ph50kdpbf - 50sht.�for civil industrial electronics.�manufacturers - infineon technologies, trademark - infineon.�. | MEXICO | ****** | UA100290 | 0.36 | 100.00 | ***** | |
| 25/Apr/2017 | 8541290010 | 1.tranzystory strong field, mos structure, n-channel (2.1vt): art.�irll014npbf - 720sht, powerful field transistors, mos structure, n-channel, 1w, art.�irll014ntrpbf - 2500sht.�for civil industrial electronics.�manufacturers - infineon technologies, trademark - infineon.�. | CHINA | ****** | UA100290 | 0.94 | 425.92 | ***** | |
| 21/Apr/2017 | 8541290010 | 1.tranzystory strong field, mos structure, n-channel, with scattering ability 83vt: art.�irfz44npbf - 3pc, powerful field transistors, mos structure, n-channel, with scattering ability 52vt: art.�irlr3410pbf - 57sht.�for civil industrial electronics.�manufacturers - infineon technologies, trademark - infineon.�. | MALAYSIA | ****** | UA100200 | 0.03 | 16.83 | ***** |
