Ukraine Trade Data of Se Imports Under HS Code 8541210090

Lookup Ukraine trade data of se imports under HS code 8541210090. Check Ukraine import trading parters of se

 
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65 Shipments Records (Demo)

8541210090  
DateHS CodeProduct DescriptionOrigin CountryQuantityUnitNet WeightTotal Value [USD] Importer Name
28/Apr/201785412100901.tranzystory for civilian electronics industry, with a capacity rozsiyuvannya0, 3vt: bc856blt1g -6000sht.torhovelna brand: on semiconductorvyrobnyk: on semiconductor.CHINA******UA1002900.2034.20 ***** 16 More Columns Available along with Company Name and Other Details etc.
28/Apr/201785412100901.tranzystory field, mos structure, n-channel capacity 225mvt: art.�mmbf170lt1g - 100 pieces.�for civil industrial electronics.�brand - on semiconductor, trademark - on semiconductor.�.N/A******UA1002000.002.43 *****
28/Apr/201785412100901. semiconductor devices: 2sc945 transistor power up to 1w field-84sht.torhovelna mark - dcc.vyrobnyk - dcc.�.CHINA******UA1250200.022.48 *****
28/Apr/201785412100901. semiconductor devices: mmun2214lt1g bipolar power transistor do1vt -100sht.torhovelna mark - ons.vyrobnyk - ons.�.CHINA******UA1250200.001.09 *****
27/Apr/201785412100901.tranzystory for civil electronics industry, with a capacity rozsiyuvannya0.6vt: 2n2905a-20sht.torhovelna mark: central semiconductorvyrobnyk: central semiconductorkrayina production: in.INDIA******UA1002300.1042.83 *****
27/Apr/201785412100901.tranzystory bipolar, pnp-type scattering power <1w (225mvt): art.�bss63lt1g - 5pcs.�for civil industrial electronics.�brand - on semiconductor, trademark - on semiconductor.�.N/A******UA1002300.001.01 *****
27/Apr/201785412100901.tranzystory low power field, mos structure, n-channel, 300mw, art.�2n7002lt3g - 50000sht, art.�2n7002lt3g - 20000sht.�for civil industrial electronics.�brand - on semiconductor, trademark - on semiconductor.�.N/A******UA1002900.70587.13 *****
26/Apr/20178541210090"1. transistors, except phototransistors with a power dissipation of less than 1w: - bc847c - 12000 pieces; bipolar; naprhua collector-emitter voltage: 45 v; strumkolektora: 0.1 a, the power dissipation of 250 mw. inproduction used telecommunications equipment, civilian designation. not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. do not have a membership transmitters or transmitters and a means pryymachiv.ne spetspryznachennya.krayina production - cntorhovelna mark - semiconductorsvyrobnyk nxp - nxp semiconductors. "CHINA******UA1002002.3086.17 *****
26/Apr/20178541210090"1. transistors, except phototransistors with a power dissipation of less than 1w: - 2n5551 - 1000 pieces; bipolar; naprhua collector-emitter voltage: 160v; strumkolektora: 0.6 a; power dissipation: 0, 625 watts. inproduction used telecommunications equipment, civil use . not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. do not have a membership transmitters or transmitters and a means pryymachiv.ne spetspryznachennya.krayina production - cntorhovelna mark - fairchild semiconductorvyrobnyk - fairchild semiconductor.�"CHINA******UA1002000.6318.69 *****
25/Apr/201785412100901. semiconductor devices: art.�bcp52-16, 115 bipolar transistor potuzhnistyudo 1w -2000sht.�for use in elektrotehnytsi.torhovelna mark - nex.vyrobnyk - nex.�.CHINA******UA1002900.2678.00 *****
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