Ukraine Import Data of Igbt | Ukraine Import Statistics of Igbt

Find latest 2017 Ukraine import data of igbt collected from Ukraine customs. Check Ukraine trade statistics of igbt imports.

Igbt Import Data of Ukraine | Ukraine Import Statistics of Igbt

Lookup Ukraine import statistics of igbt. Get Ukraine trade data of Igbt imports with trading partners and importers name
 
 
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22 Records (Demo)

Import Shipment Records Found

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DateHS CodeProduct DescriptionOrigin CountryQuantityUnitNet WeightTotal Value [USD]
26/Apr/20178541290090"1. transistors, phototransistors except: - TIKW50n65h5 - 4 pieces; IGBT, the collector-emitter voltage of 650 V, the collector current of 80 A, Power dissipation: 305 watts. Used in the manufacture of telecommunications equipment, civilian purposes. It is not hardware or dlyazastosuvannya protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - TWTorhovelna mark - InfineonVyrobnyk - Infineon. "TAIWAN0UA1250200.0348.568693284 16 More Columns Available along with Company Name and Other Details etc.
25/Apr/201785412900101.Bipolyarnyy insulated gate transistor (IGBT), power dissipation of 200W, art. IRG4PH50KDPBF - 50sht. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. .MEXICO0UA1002900.361100.0000112
25/Apr/20178541290090"1. Semiconductor devices - transistors nefotochutlyvi, with power 15/30 kW (50 -500Hts) part that comes to frequency converters series" "Movitrac", "production" "SEW" ": Power transistor module (IGBT module) based on bipolar transistors, designed to enhance the generation aboperetvorennya frequency electrical currents (nominalnanapruha -600V nominal amperage: 95 - 125 A): - art.W9445 # 83AC12ISM; -art.W9445 # 65SD120-D.. "GERMANY0UA1101800.44395.7767834
24/Apr/201784248900001.Bipolyarnyy insulated gate transistor (IGBT), power dissipation of 200W, art. IRG4PH50KDPBF - 50sht. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. .HUNGARY0UA30520030053886.51049
21/Apr/20178515391800"1.Mashyny and devices intended for manual welding with coated electrodes in a case without them, according to the passport equipment, welding inverter IGBT 270A, Smart TM BauMaster, art. AW-97I27SM - 660 shtVyrobnyk:" "JIANGSU JINDING ELECTRIC TOOLS GROUP CO ., LTD "" Trade mark: BauMasterKrayina manufacturing: CN Places 330 boxes. "CHINA0UA500030234310889.99988
21/Apr/20178515391800"1.Mashyny and devices intended for manual welding with coated electrodes in a case without them, according to the passport equipment, welding inverter IGBT 230A, Smart TM BauMaster, art. AW-97I23SMDK, - 400 shtInvertor IGBT 270A welding, Smart TM BauMaster, art. AW-97I27SM - 140 shtInvertor welding IGBT 270A, smart TM BauMaster, art. AW-97I27SMD, - 600 shtInvertor welding IGBT 270A, smart TM BauMaster, art. AW-97I27SMDK - 400 shtVyrobnyk: "" JIANGSU JINDING ELECTRIC TOOLS GROUP CO ., LTD "" Trade mark: BauMasterKrayina manufacturing: CN Places 770 boxes. "CHINA0UA500030620024809.99998
18/Apr/20178541290010"1.Tranzytor n-channel, with a maximum power dissipation 290Vt type IGBT N-Channel 88A, 1200V, SOT-227B, art.1829727-10sht, Country of origin - USVyrobnyk - IXYSTorhovelna mark - IXYS."UNITED STATES0UA1002900.44158.2653596
18/Apr/20178541290010"1.Tranzytor n-channel, with a maximum power dissipation 450Vt type IGBT N-Channel 100A, 1200V, SOT-227B, art.2674741-1sht, Country of origin - DEVyrobnyk - SEMICONDUCTORTorhovelna mark - SEMICONDUCTOR."GERMANY0UA1002900.0522.78676258
18/Apr/20178541290090"1. transistors, phototransistors except: - PM150RSD120 - 1 pc; IGBT, the collector-emitter voltage of 1200 V, the collector current of 150 A; Power dissipation: 781 Vt.- PS21963-4A - 1 unit, IGBT, voltage kolektor- emitter: 450 V, collector current: 10A; Power dissipation: 27 W. used in vyrobnytstvitelekomunikatsiynoho equipment for civil use. It is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. It is not zasobomspetspryznachennya.Krayina production - CNTorhov Elnya brand - Mitsubishi Electric SemiconductorVyrobnyk - Mitsubishi Electric Semiconductor. "CHINA0UA1250200.93299.2000838
18/Apr/20178541290090"1. transistors, phototransistors except: - 6MBP75RSA120-03 - 1 pc; IGBT, the collector-emitter voltage of 1200 V, the collector current of 75 A, the power dissipation of 500 watts. Used in the manufacture of telecommunications equipment, civilian purposes. It is not equipment or protective systems dlyazastosuvannya in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - ElectricVyrobnyk Fuji - Fuji Electric. "CHINA0UA1250200.25332.1427247
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Igbt Import Data Sample with Importer and Exporter Name

Igbt Importer Sample

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Date 26/Apr/2017
Importer Name "ТОВ ""Радіомаг Україна"""
Importer Address
бул. Чоколівський, 42А, оф. 203 03087, м. Київ
Exporter Name Micros sp.j. W.Kedra i J.Lic
Product Description
"1. transistors, phototransistors except: - TIKW50.........
HS Code 8541290090Value 8.568693284
Quantity 0Unit UA125020
Net Weight 0.034
Origin Country TAIWAN
 

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Customs Data

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In Igbt Import Data of Ukraine, you will find that who is exporting and who is importing along with other important information such as product description, price, quantity, HS Code, value, loading & unloading place etc. It is collected from the country’s customs and based on actual records of shipment which enter in or goes out from any Ukraine Port. Subscribe for Igbt Import Data of Ukraine and you will access the following things:

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