Ukraine Trade Data of Dr Imports Under HS Code 8541290010
Lookup Ukraine trade data of dr imports under HS code 8541290010. Check Ukraine import trading parters of dr
15 Shipments Records (Demo)
8541290010 
| Date | HS Code | Product Description | Origin Country | Quantity | Unit | Net Weight | Total Value [USD] | Importer Name | Click to view 16 more columns 16 More Columns Available |
|---|---|---|---|---|---|---|---|---|---|
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -irfpe50pbf - 20 pieces; field; drain-source voltage: 800 v, drain current: 7.8 a, power: 190 watts. used in the manufacture telekomunikatsiynohoobladnannya, civil use. it is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - semiconductorsvyrobnyk vishay - vishay semiconductors. " | CHINA | ****** | UA100200 | 0.13 | 13.83 | ***** | 16 More Columns Available along with Company Name and Other Details etc. |
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -irf1010npbf - 30 pcs, field, drain-source voltage of 55v, drain current 72a.potuzhnist scattering 130vt.- irf3205zpbf - 40 pcs, field, drain-source voltage 55v, 75a drain current, power dissipation 170vt. - irf530npbf - 100 pieces; field; napruhastik-source: 100v; current drain: 17a; power dissipation: 79vt. - irf7341trpbf- 100 pieces; field; drain-source voltage of 55 v, current flow: 4, 7 a; power: 2w. - irf7389pbf - 200 pieces; field; current: 7, 3a, voltage 30v drain-source, power dissipation, 2, 5vt. - irf7416trpbf - 100 pieces; field; napruhast�-30v to-drain, drain current: -10a, power: 2, 5vt. - irf8313trpbf - 50 pieces; field; vytik30v-voltage drain, drain current: 9, 7a; power: 2w. - irf9z24npbf - 1000 pieces; field; power drain-source -55 v drain current: -12 a; power: 45w. - irfh5010tr2 - 40 pcs, field, drain-source voltage of 100 v, the drain current of 13 a; power: 3.6 watt. - irlb3813 - 50 pieces, field, h apruha drain-source 30 v, drain current of 260 a, 230 w power dissipation.�-irlml0030trpbf - 2500 pcs;�field;�power drain-source: 30v, drain current 5, 3a, power dissipation 1, 3vt.�- irlml0060trpbf - 3000 pcs;�field;�napruhastik-source: 60 v;�current drain: 2, 7a, power dissipation: 1.25 w.�-irlr2905trpbf - 200 pieces;�field;�power drain-source 16 v;�drain current: 42a, power dissipation of 110 watts.�- irlu024n - 40 pieces;�field;�power flow-vytik60v, 56a drain current.�powerful number scattering 42vt.�used inproduction telecommunications equipment, civilian purposes.�not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi.�do not have a membership transmitters or transmitters and a means pryymachiv.ne spetspryznachennya.krayina production - cntorhovelna mark - international rectifiervyrobnyk - international rectifier " | CHINA | ****** | UA100200 | 4.18 | 626.08 | ***** | |
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -fds4935a - 100 pieces; field; drain-source voltage of -30v, the drain current of 7a. potuzhnistrozsiyuvannya 2w. used in the manufacture of telecommunications equipment, civilian purposes. it is not equipment dlyazastosuvannya or protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - fairchild semiconductorvyrobnyk - fairchild semiconductor. " | CHINA | ****** | UA100200 | 0.03 | 10.34 | ***** | |
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -tirlr2905 - 50 pieces; field; drain-source voltage of 16 v, drain current 42 a; power dissipation of 110 watts. vyrobnytstvitelekomunikatsiynoho used in equipment for civil use. it is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. it is not zasobomspetspryznachennya.krayina production - cntorhovelna mark - international rectifiervyrobnyk - international rectifier. " | CHINA | ****** | UA125020 | 0.04 | 14.80 | ***** | |
| 26/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: -tirf530 - 50 pieces; field; drain-source voltage: 100v, a drain current 17 a, power dissipation of 79 watts. vyrobnytstvitelekomunikatsiynoho used in equipment for civil use . it is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. it is not zasobomspetspryznachennya.krayina production - phtorhovelna mark - international rectifiervyrobnyk - international rectifier. " | PHILIPPINES | ****** | UA125020 | 0.18 | 12.06 | ***** | |
| 25/Apr/2017 | 8541290010 | "1. transistor powerful field: - irfb52n15d - 203 pieces voltage - 200 v, current - 51 a, 230 v power vt.maksymalna frequency - 1 mhz, executed in the housing to-220av, 3 pins. robochatemperatura: -55 to + 175s. have low battery drain dlyaznyzhennya shutter / switch vtrat.vykorystovuyut sya the production vysokochastotnyhkonv erteriv. not military. trademark: "" ir "" company manufacturer: "" international rectifier corporation "" cn / china. " | N/A | ****** | UA403030 | 0.57 | 239.71 | ***** | |
| 24/Apr/2017 | 8541290010 | "1. truck: -mark - mercedes-benz; -model - vito;-body size - wdf63960513810968;-total seats, including driver's seat - 3; -purpose - for use on general roads; -type engine - diesel ; - engine - 594336; - engine cylinder capacity - 2143 cm3; - load capacity - 0.844 t; - mass in case of maximum load - 2.800; -such as was used; -type of body - van (in which missing seats, holes for possible seating and safety devices) - wheel formula - 4x2; calendar year of manufacture - 2013; - model year made�nia - 2013; " | N/A | ****** | UA100290 | 0.01 | 111.98 | ***** | |
| 10/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: - tirf7341 - 50 pieces; field; drain-source voltage of 55 v, drain current: 4, 7 a; power: 2 watts. used in the manufacture of telecommunications equipment, civil use. it is no equipment or protective systems dlyazastosuvannya in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - phtorhovelna mark - international rectifiervyrobnyk - international rectifier. " | PHILIPPINES | ****** | UA125020 | 0.01 | 11.36 | ***** | |
| 10/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: - tirf7313 - 60 pieces; field; drain-source voltage of 30 v, drain current: 5, 2 a; power: 2 vt.- tirlb3813 - 50 pieces ; field; voltage drain-source: 30 v, drain current: 190 a; power: 230 watts. used in the manufacture of telecommunications equipment, civilian purposes. it is no equipment or protective systems dlyazastosuvannya in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovel�marc - international rectifiervyrobnyk - international rectifier. " | CHINA | ****** | UA125020 | 0.12 | 52.19 | ***** | |
| 05/Apr/2017 | 8541290010 | "1. silicon transistors field powerful, n-channel, insulated gate: - rfd14n05lsm - 1000 pieces; field; eg ha drain-source: 50 v, drain current: 14a; case: to252aa. used in the manufacture telekomunikatsiynohoobladnannya, civilian purposes. it is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.krayina not a means of production - cntorhovelna mark - fairchild semiconductorvyrobnyk - fairchild semiconductor. " | CHINA | ****** | UA100200 | 0.30 | 224.33 | ***** |
