27/Nov/2017 | 3818009000 | Semiconductor substrate for manufacturing geteroepieaksialnyh structure in the form of discs, alloy intended for use in the electronic and semiconductor industry | *** | FREIBERGER COMPOUND | *** | *** | 39 | 48434,19 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
22/Nov/2017 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, then | CHINA | ABSENT | *** | *** | 0.12 | 4,500 | ***** |
15/Nov/2017 | 3818001000 | Doped silicon in a plate shape (2050 pcs.) with double-sided polishing. plates made of silicon high quality method of growing czochralski silicon thickness 750-800 microns. it is intended for their own production, to see. | KOREA REPUBLIC OF | ABSENT | *** | *** | 660.10 | 124700,27 | ***** |
08/Nov/2017 | 3818009000 | Chemical compounds doped for use in electronics - epitaxial wafers: 2-inch green ingan, wavelength 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 mcd - 2 pcs. epitaxial cm. complete | CHINA | ABSENT | *** | *** | 0.16 | 1162,07 | ***** |
26/Sep/2017 | 3818009000 | The semiconductor wafer (substrate) for the manufacture of heteroepitaxial structures. shaped disk diameter (50.0-100.0 +/- 0.3 mm) and 0.35-0.45 +/- 0.015-0.025 thickness mm) doping chemicals. intended to base rogue | JAPAN | *** | 15,4 | *** | 15.40 | 29,750 | ***** |
01/Sep/2017 | 3818009000 | Single crystal plate high resistivity gallium arsenide compensate chrome (gaas: cr), not polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) registration:: :::: | RUSSIA | *** | 1,5 | *** | 1.50 | 2385,26 | ***** |