27/Nov/2017 | 3818009000 | Semiconductor substrate for manufacturing geteroepieaksialnyh structure in the form of discs, alloy intended for use in the electronic and semiconductor industry | *** | FREIBERGER COMPOUND | *** | *** | 39 | 48434,19 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
22/Nov/2017 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, then | CHINA | ABSENT | *** | *** | 0.12 | 4,500 | ***** |
20/Nov/2017 | 3818009000 | Substrate monocrystalline gallium arsenide gaas (iii / v) with successive grown heteroepitaxial layers based on gallium arsenide compounds gaas (iii / v), used in production of the laser device. | TAIWAN CHINA | ABSENT | *** | *** | 0.90 | 39,600 | ***** |
15/Nov/2017 | 3818009000 | Chemical compounds alloy: ingots gaas monocrystalline gaas (gallium and arsenic desired quantity ratio) | SLOVAKIA | CMK | *** | *** | 0.52 | 2958,2 | ***** |
08/Nov/2017 | 3818009000 | Chemical compounds doped for use in electronics - epitaxial wafers: 2-inch green ingan, wavelength 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 mcd - 2 pcs. epitaxial cm. complete | CHINA | ABSENT | *** | *** | 0.16 | 1162,07 | ***** |
07/Nov/2017 | 3818009000 | Epitaxial structures alloyed, in the form of discs, for the manufacture of solar cells, the goods can be opened in the premises under sterile conditions class 8 and above: | GERMANY | ABSENT | *** | *** | 117.19 | 785461,67 | ***** |
26/Sep/2017 | 3818009000 | The semiconductor wafer (substrate) for the manufacture of heteroepitaxial structures. shaped disk diameter (50.0-100.0 +/- 0.3 mm) and 0.35-0.45 +/- 0.015-0.025 thickness mm) doping chemicals. intended to base rogue | JAPAN | *** | 15,4 | *** | 15.40 | 29,750 | ***** |
20/Sep/2017 | 3818009000 | Molecular sieve from silicon, optical emission spectrometry icp optima 4300 the dv, used in studies of environmental, petrochemical, pharmaceutical areas not contain radioactive sources other than the crowbar and waste, not consumption | GERMANY | *** | 0,02 | *** | 0.02 | 355,97 | ***** |
05/Sep/2017 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm made gallium arsenide (gaas), on whose surface apply epitaxial heterostructures from thin layers of gallium arsenide (gaas) and aluminum arsenide gallium (: al | TAIWAN CHINA | *** | 0,68 | *** | 0.68 | 31394,35 | ***** |
01/Sep/2017 | 3818009000 | Single crystal plate high resistivity gallium arsenide compensate chrome (gaas: cr), not polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) registration:: :::: | RUSSIA | *** | 1,5 | *** | 1.50 | 2385,26 | ***** |