25/Nov/2017 | 3818009000 | The substrate in the form of a disk, doped for further use in the process of growing (production) epitaxial heterostructures installation mocvd: for the microelectronics industry / not military / | CHINA | AXT | *** | *** | 21.18 | 50092,3 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
24/Nov/2017 | 3818001000 | Monocrystalline wafers from phosphorus-doped silicon, not processed, provided for further processing for multi-stage production, gross weight from the pallet - 11462.62 kg | CHINA | ABSENT | *** | *** | 10,233.60 | 874520,75 | ***** |
22/Nov/2017 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, then | CHINA | ABSENT | *** | *** | 0.12 | 4,500 | ***** |
21/Nov/2017 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; packed in tape / for 25 pcs / vacuum bags, cardboard, and pave the foam insert: | CHINA | MCL ELECTRONIC MATERIALS, LTD | *** | *** | 27.24 | 21,615 | ***** |
15/Nov/2017 | 3818009000 | Monocrystalline wafers silicon carbide polished on both sides, vanadium-doped, semi-insulating, with the same conductivity over the entire surface of the plate to the isp. as a basis for izgotovleniyai heterostructures for microelectronics | CHINA | SICC | *** | *** | 2.36 | 38318,05 | ***** |
08/Nov/2017 | 3818009000 | Chemical compounds doped for use in electronics - epitaxial wafers: 2-inch green ingan, wavelength 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 mcd - 2 pcs. epitaxial cm. complete | CHINA | ABSENT | *** | *** | 0.16 | 1162,07 | ***** |
08/Nov/2017 | 3818001000 | Silicon is alloyed in the form of a plate of 300 mm diameter | CHINA | ABSENT | *** | *** | 6 | 880,05 | ***** |
18/Sep/2017 | 3818001000 | Doped silicon, purification, monocrystalline, plate-shaped, polished: silicon wafer mkrsy00b, 150mm, n-type, <100>, phosphorus, 3, 6 - 5, 4 ohm-cm, 675 +/- 15um, prime wafer; diameter: 150 mm; method of growing: cz; conductivity type: n; went | CHINA | *** | 14,4 | *** | 14.40 | 2955,47 | ***** |
15/Sep/2017 | 3818001000 | Round tubes, silica-alumina (sial 90/10), co steel core. target for magnetron sputtering for the production line of coated glass. it serves for application to glass thin-film coatings. : tee-tube sial 90/10 od159 * id125 * | CHINA | *** | 372 | *** | 372 | 19536,12 | ***** |
06/Sep/2017 | 3818001000 | Monocrystalline wafers from phosphorus-doped silicon, are not processed. provided for further multi-stage process in the manufacturing in order to obtain suitable vehicle for the manufacture of solar cells, not military: neobrab | CHINA | *** | 1,062 | *** | 1,062 | 96019,44 | ***** |