HS Code 3818 Trade Statistics of Russia Imports from China

Lookup HS code 3818 trade statistics of Russia imports from China. Get Russia HS Code 3818 import data and check import value quantity and market size of products under HS Code 3818

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27 Shipments Records (Demo)

DateHS CodeProduct DescriptionCountryTrademarkQuantityUnitNet WeightTotal Value [USD] Importer Name
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25/Nov/20173818009000The substrate in the form of a disk, doped for further use in the process of growing (production) epitaxial heterostructures installation mocvd: for the microelectronics industry / not military /CHINAAXT******21.1850092,3 ***** 84 More Columns Available along with Company Name and Other Details etc.
24/Nov/20173818001000Monocrystalline wafers from phosphorus-doped silicon, not processed, provided for further processing for multi-stage production, gross weight from the pallet - 11462.62 kgCHINAABSENT******10,233.60874520,75 *****
22/Nov/20173818009000Chemical elements doped - indium arsenide for use in electronics, in the form of discs diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, thenCHINAABSENT******0.124,500 *****
21/Nov/20173818001000Silicon wafer polishing, doped monocrystalline, electronics; packed in tape / for 25 pcs / vacuum bags, cardboard, and pave the foam insert:CHINAMCL ELECTRONIC MATERIALS, LTD******27.2421,615 *****
15/Nov/20173818009000Monocrystalline wafers silicon carbide polished on both sides, vanadium-doped, semi-insulating, with the same conductivity over the entire surface of the plate to the isp. as a basis for izgotovleniyai heterostructures for microelectronicsCHINASICC******2.3638318,05 *****
08/Nov/20173818009000Chemical compounds doped for use in electronics - epitaxial wafers: 2-inch green ingan, wavelength 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 mcd - 2 pcs. epitaxial cm. completeCHINAABSENT******0.161162,07 *****
08/Nov/20173818001000Silicon is alloyed in the form of a plate of 300 mm diameterCHINAABSENT******6880,05 *****
18/Sep/20173818001000Doped silicon, purification, monocrystalline, plate-shaped, polished: silicon wafer mkrsy00b, 150mm, n-type, <100>, phosphorus, 3, 6 - 5, 4 ohm-cm, 675 +/- 15um, prime wafer; diameter: 150 mm; method of growing: cz; conductivity type: n; wentCHINA***14,4***14.402955,47 *****
15/Sep/20173818001000Round tubes, silica-alumina (sial 90/10), co steel core. target for magnetron sputtering for the production line of coated glass. it serves for application to glass thin-film coatings. : tee-tube sial 90/10 od159 * id125 *CHINA***372***37219536,12 *****
06/Sep/20173818001000Monocrystalline wafers from phosphorus-doped silicon, are not processed. provided for further multi-stage process in the manufacturing in order to obtain suitable vehicle for the manufacture of solar cells, not military: neobrabCHINA***1,062***1,06296019,44 *****
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