28/Nov/2017 | 8541401000 | Led, semiconductor material - gallium arsenide, indium phosphide, led color - green / red, typical wavelengths 570/630 hm, intensity 50/230 mcd, a maximum voltage of 2.1 / 1.95, current 20 ma is intended for illumination and | *** | KINGBRIGHT, CHINA | 250 | PC | 0.11 | 71,2 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
26/Nov/2017 | 8541401000 | Semiconductor leds type semiconductor -arsenofosfid gallium for use in printed circuit boards | *** | KINGBRIGHT | 100 | PC | 0.03 | 4,91 | ***** |
24/Nov/2017 | 8541401000 | Light emitting diodes (led), does not contain. galvanoelementov does not contain. encryption (cryptographic) means not yavl. electronic and high-frequency devices, non-domestic applications sm.dopolnenie | CHINA | UNILUMIN GROUP | 2 | PC | 748.81 | 244761,15 | ***** |
24/Nov/2017 | 8541401000 | Light emitting diodes: warm white 5000k series oslon square "gwcssrm2.pm-n3n5-a333-1" and red series oslon ssl 80 "ghcs8pm1.24-4t2u-1." type semiconductor - gallium nitride. psu, power cord and switch is not. | MALAYSIA | OSRAM | 76,200 | PC | 24.19 | 25360,48 | ***** |
21/Nov/2017 | 8541401000 | Infrared led, semiconductor material - gallium aluminum arsenide, designed for distribution of the ir signal via fiber, typical 830 nm, a maximum voltage of 5 v, the current of 100 ma, for use in areas | *** | VISHAY SEMICONDUCTOR, CHINA | 68 | PC | 0.01 | 60,2 | ***** |
21/Nov/2017 | 8541401000 | Light emitting diodes duris e5 series models "gwjdsrs1.cc-frft-5l7n-l1n2", predna. for a backlight, lighting stores, lighting stores. type semiconductor gallium nitride. power supply, power cord, switch is not. | *** | OSRAM | 6,000 | PC | 1.20 | 825,06 | ***** |
20/Nov/2017 | 8541401000 | Light emitting diodes series duris s5 "gwpslr31.pm-lslt-xx53-1", predna. for use in industrial, street lighting, road and tunnel lighting fixtures. type semiconductor - gallium nitride. power supply, power cord, switch is not. | *** | OSRAM | 201,000 | PC | 17.29 | 14229,6 | ***** |
16/Nov/2017 | 8541401000 | A light emitting diode infrared glow type semiconductor gallium arsenide, current consumption to 1000 ma napr.pit 3.4 volts, 850 nm, -40 +125 grad .: | *** | MOUSER | 542 | PC | 1.20 | 2331,6 | ***** |
14/Nov/2017 | 8541401000 | Semiconductor laser diode module with the fiber output (laser diodes) mounted in a case to the output terminal, type semiconductor - indium-gallium-arsenide, is used to pump (transmission power) optical fibers in fiber | *** | SHENGSHI OPTICAL | 24 | PC | 0.49 | 377,14 | ***** |
11/Nov/2017 | 8541401000 | Light emitting diodes (led), for use in automation of production processes in various industries, does not contain. galvanoelementov | *** | OMRON | 25 | PC | 0.30 | 137,57 | ***** |