18/Sep/2017 | 8542323900 | Electronic integrated circuits monolithic, single, not combined with other components that are not for fire control, not military not scrap electric: dram: a memory 1gb memory capacity, is designed | FRANCE | *** | 0,26 | KG | 0.26 | 155484,59 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
11/Sep/2017 | 8542323900 | Electronic integrated circuits monolithic, single, not combined with other components that are not for fire control, not military not scrap electric: dram: a memory 1gb memory capacity, is designed | FRANCE | *** | 0,52 | KG | 0.52 | 314412,57 | ***** |
09/Sep/2017 | 8542323900 | Electronic integrated circuits, monolithic: dynamic random access memory (dram), collected, single, memory 1gbit; not scrap electric not military: designed for surface mounting on printed circuit boards | TAIWAN CHINA | *** | 0,9 | KG | 0.90 | 229,34 | ***** |
05/Sep/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity over 512 mbit / not jom electrical / memory chip (memory devices) are designed for storing digital information (programs, configuration parameters, data | CHINA | *** | 0,02 | KG | 0.02 | 315 | ***** |
02/Sep/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity greater than 512 mbit: el.modul of ram 4gb ddr3, is designed to accelerate data exchange with computers, 4 gb and runs at 1866 mhz (complete with a service | CHINA | *** | 0,16 | *** | 0.16 | 78,81 | ***** |