30/Nov/2017 | 8541210000 | Transistor designed for use telecommunications equipment for surface mounting on circuit boards | *** | ON SEMICONDUCTORS | 99 | PC | 0.11 | 48,68 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
29/Nov/2017 | 8541210000 | Transistor is designed to build reading / writing device information to the intelligent smart cards and birkah.dlya use loyalty complete systems for user identification | CHINA | ABSENT | 20,450 | PC | 0.36 | 911,99 | ***** |
29/Nov/2017 | 8541210000 | Transistor semiconductor c power dissipation 0.36 bt type semiconductor - single-element, is designed to control the current in an electric circuit. model bss138_sb9g001 art: a2c00000609 - 21000 pcs | *** | FAIRCHILD | 21,000 | PC | 1.00 | 332,94 | ***** |
29/Nov/2017 | 8541210000 | Transistor semiconductor with power dissipation 0.25w type semiconductor - single-element, is designed to control the current in an electric circuit. model pdta1114eu, 115 art: a2c00023656 - 9000 pcs | *** | NXP | 9,000 | PC | 0.36 | 55,97 | ***** |
29/Nov/2017 | 8541210000 | Transistor semiconductor c power dissipation 0.2 w type semiconductor - single-element, is designed to control the current in an electric circuit. model bc857bw, 115 art: a2c00044348 - 3000 pcs | *** | NXP | 24,000 | PC | 0.94 | 268,11 | ***** |
22/Nov/2017 | 8541210000 | Transistor output optocouplers. is a semiconductor electronic devices designed to ensure galvanic isolation of the control circuit of the output circuit. crowbar are not electric. general industrial applications | *** | AVAGO | 10 | PC | 0.01 | 5,68 | ***** |
21/Nov/2017 | 8541210000 | N-channel mos transistors are designed for power distribution in car alarm system | *** | DIODES INC. | 18,000 | PC | 0.60 | 320,5 | ***** |
14/Nov/2017 | 8541210000 | Output optocouplers. is a semiconductor electronic devices designed to ensure galvanic isolation of the control circuit of the output circuit. crowbar are not electric. industrial applications. new. tova | *** | VISHAY | 2,000 | PC | 0.40 | 590,17 | ***** |
13/Nov/2017 | 8541210000 | Field-effect transistors, power dissipation of 300 mw, 60 v, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, art: | *** | DIODES INC | 8 | PC | 0.00 | 0,2 | ***** |
02/Nov/2017 | 8541210000 | Field-effect transistors, power dissipation of 700 mw, voltage -45 v semiconductors - silicon is designed for logic circuits to control the parameters of their energy consumption, | *** | DIODES INC, CHINA | 30 | PC | 0.01 | 6,28 | ***** |