Channel Trade Data of Russia Imports under HS Code 8541210000

Get channel trade data of Russia imports under HS code 8541210000. Check Russia trade statistics of channel imports under HS code 8541210000 with market share and size, price, name of trade partners etc.

 
shipment icon

73 Shipments Records (Demo)

8541210000  
DateHS CodeProduct DescriptionCountryTrademarkQuantityUnitNet WeightTotal Value [USD] Importer Name
Click to view 84 more columns
84 More Columns Available
84 More Columns Available
23/Nov/20178541210000Mos transistors for pcb mounting (not an electrical crowbar), field, n-channel, power dissipation 0.36vt. occupies part of the shipping carton.***WITHOUT A TRADEMARK10PC0.000,23 ***** 84 More Columns Available along with Company Name and Other Details etc.
22/Nov/20178541210000P-channel power mos transistors "fdn5618p", c 0.5 tu power dissipation, drain-source voltage 60 v, gate-source voltage 20b, imp. drain current 10a, predna. for a current converters, switches, loads diagram of the control pi***FAIRCHILD SEMICONDUCTOR6,000PC0.26377,4 *****
14/Nov/20178541210000Semiconductor devices not scrap electric: hexfet-transistors, n-channel used in instrument for surface mounting. type semiconductor - silicon, the power dissipation of 960 mw.***INFINEON750PC0.0380,11 *****
14/Nov/20178541210000Transistor: - digital "bcr08pnh6327" with npn / pnp-junction, power dissipation 0.25 w; - n-channel field-effect "bss138wh6327" with moschn.rasseivaniya 0, 36vt. type semiconductor silicon.***INFINEON111,000PC5.872511,83 *****
13/Nov/20178541210000N-channel mos transistors are designed for use in the telecommunications oborudoanii general purpose***INTERNATIONAL RECTIFIER42,000PC2.861650,6 *****
02/Nov/20178541210000Transistor for semiconductor pcb power dissipation 0, 83vt, field n-channel:***IXYS38PC0.03997,5 *****
30/Sep/20178541210000Semiconductor transistors dissipation of less than 1w, for mounting on printed circuit boards for use in electronic equipment radio: field insulated gate, npn-channel, power dissipation 0.3w max. permissible current of 0.07 a, maTAIWAN CHINA***0,02KG0.022 *****
29/Sep/20178541210000Transistors, except phototransistor power dissipation less than 1 w, used in the system of industrial electronics mosfets with channel p type smd held for devices industrial electronics. voltage prCHINA***0,08KG0.0813,57 *****
29/Sep/20178541210000Transistors semi: semiconductor npn bipolar transistor structure, the power dissipation 0.33 bt current 0.2 a classification code 6340128 for pcb radio equipment mosfet p-channel, power dissipationUNITED KINGDOM***0,01KG0.0111,35 *****
28/Sep/20178541210000Npn-channel transistor. maximum collector-emitter voltage 8v maximum current 140 ma. maximum power dissipation 580 mw. dimensions 10 x 4 x 1.5mm. not a crowbar elektrooborudovnaiya. has functions cryptography (encryption). note: enUNITED KINGDOM***0,05KG0.053,5 *****
12345...90NextGoTo:
Need to access complete data?
loading icon

Get global trade data online at your fingertips

  
TERMS & CONDITIONS     |    CANCELATION POLICY     |    REFUND POLICY     |     PRIVACY POLICY
Copyright © 2021 Export Genius. All rights reserved