23/Nov/2017 | 8541210000 | Mos transistors for pcb mounting (not an electrical crowbar), field, n-channel, power dissipation 0.36vt. occupies part of the shipping carton. | *** | WITHOUT A TRADEMARK | 10 | PC | 0.00 | 0,23 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
22/Nov/2017 | 8541210000 | P-channel power mos transistors "fdn5618p", c 0.5 tu power dissipation, drain-source voltage 60 v, gate-source voltage 20b, imp. drain current 10a, predna. for a current converters, switches, loads diagram of the control pi | *** | FAIRCHILD SEMICONDUCTOR | 6,000 | PC | 0.26 | 377,4 | ***** |
14/Nov/2017 | 8541210000 | Semiconductor devices not scrap electric: hexfet-transistors, n-channel used in instrument for surface mounting. type semiconductor - silicon, the power dissipation of 960 mw. | *** | INFINEON | 750 | PC | 0.03 | 80,11 | ***** |
14/Nov/2017 | 8541210000 | Transistor: - digital "bcr08pnh6327" with npn / pnp-junction, power dissipation 0.25 w; - n-channel field-effect "bss138wh6327" with moschn.rasseivaniya 0, 36vt. type semiconductor silicon. | *** | INFINEON | 111,000 | PC | 5.87 | 2511,83 | ***** |
13/Nov/2017 | 8541210000 | N-channel mos transistors are designed for use in the telecommunications oborudoanii general purpose | *** | INTERNATIONAL RECTIFIER | 42,000 | PC | 2.86 | 1650,6 | ***** |
02/Nov/2017 | 8541210000 | Transistor for semiconductor pcb power dissipation 0, 83vt, field n-channel: | *** | IXYS | 38 | PC | 0.03 | 997,5 | ***** |
30/Sep/2017 | 8541210000 | Semiconductor transistors dissipation of less than 1w, for mounting on printed circuit boards for use in electronic equipment radio: field insulated gate, npn-channel, power dissipation 0.3w max. permissible current of 0.07 a, ma | TAIWAN CHINA | *** | 0,02 | KG | 0.02 | 2 | ***** |
29/Sep/2017 | 8541210000 | Transistors, except phototransistor power dissipation less than 1 w, used in the system of industrial electronics mosfets with channel p type smd held for devices industrial electronics. voltage pr | CHINA | *** | 0,08 | KG | 0.08 | 13,57 | ***** |
29/Sep/2017 | 8541210000 | Transistors semi: semiconductor npn bipolar transistor structure, the power dissipation 0.33 bt current 0.2 a classification code 6340128 for pcb radio equipment mosfet p-channel, power dissipation | UNITED KINGDOM | *** | 0,01 | KG | 0.01 | 11,35 | ***** |
28/Sep/2017 | 8541210000 | Npn-channel transistor. maximum collector-emitter voltage 8v maximum current 140 ma. maximum power dissipation 580 mw. dimensions 10 x 4 x 1.5mm. not a crowbar elektrooborudovnaiya. has functions cryptography (encryption). note: en | UNITED KINGDOM | *** | 0,05 | KG | 0.05 | 3,5 | ***** |