30/Nov/2017 | 8542323100 | Dynamic random access memory (dram) with a storage capacity is limited to 512 mbit (not jom electrical not have encryption function (cryptography) sm.dopolnenie. | *** | MICRON TECHNOLOGY, INC | 200 | PC | 0.06 | 665,44 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
30/Nov/2017 | 8542326900 | Electronic integrated circuits - asynchronous / simultaneous flash memory "nand" "mt29f8g08ababawp-it: b" with a storage capacity of 8 gb, ranges supply voltage 2.7-3, 6v designed for universal use in microelectronics. working range t | *** | MICRON | 663 | PC | 1.61 | 3911,7 | ***** |
30/Nov/2017 | 8542399010 | Monolithic integrated microchip / eight 8-bit cmos multiplying dac series ad8842; applied in automatic control schemes for replacement tuning capacitor in the regulating circuit | *** | ANALOG DEVICES | 310 | PC | 0.20 | 2530,51 | ***** |
30/Nov/2017 | 8542327500 | Microcircuits monolithic integrated electronic - storage device type eeprom (eeprom) memory capacity c 2 kbps. (operating temperature range: -40 ... + 85 � c) (not scrap electric) | *** | WITHOUT A TRADEMARK | 37 | PC | 0.02 | 17,25 | ***** |
30/Nov/2017 | 8542399010 | Spare parts for earlier imported kettles thermos ba-5001, ba-5002. monolithic integrated circuits (control board) is microcircuit in which circuit elements (diodes transistors, resistors capacitors interconnections) on | CHINA | ABSENT | 130 | PC | 1.31 | 13,4 | ***** |
29/Nov/2017 | 8542326900 | Monolithic integrated circuits: chip flash-memory, with a storage capacity 1gb, voltage 3.6 v, there is no encryption function and without encryption tools are designed for surface mounting on circuit boards control and automation work | *** | CYPRESS | 15 | PC | 0.05 | 202,5 | ***** |
29/Nov/2017 | 8542323900 | Dynamic random access memory (dram) with a storage capacity of 16 gb / not yavl.lomom /: | *** | HP | 1 | PC | 0.06 | 594,85 | ***** |
29/Nov/2017 | 8542329000 | Integrated circuits, monolithic, is a memory are provided for use in telecommunications equipment. supply voltage of 2.5 to 5.5 v.rabochaya temperatures from -40 to +85 c, memory capacity of 256 kb. not possess the function | *** | STMICROELECTRONICS | 25,000 | PC | 2 | 8555,63 | ***** |
28/Nov/2017 | 8542323900 | Dynamic random access memory (dram) based memory module form factor ddr3 so-dimm 1333 204-pin (pc3-10600), 4 gb capacity (mb 512 x 8), 1.35 voltage or 1.5 vdc, used industrial | *** | CERVOZ | 2 | PC | 0.10 | 108,02 | ***** |
27/Nov/2017 | 8542323900 | Dynamic random access memory with a storage capacity more than 512 mbit not have encryption function (cryptography) not yavl. teh.sredstvom prednazn. for information unspoken, accessories for the pc, not for prom.sborki, mark.mest: | TAIWAN CHINA | APACER | 20 | PC | 0.61 | 3189,15 | ***** |