Bin Bin Trade Data of Russia Imports under HS Code 8541290000

Get bin bin trade data of Russia imports under HS code 8541290000. Check Russia trade statistics of bin bin imports under HS code 8541290000 with market share and size, price, name of trade partners etc.

 
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43 Shipments Records (Demo)

8541290000  
DateHS CodeProduct DescriptionCountryTrademarkQuantityUnitNet WeightTotal Value [USD] Importer Name
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30/Nov/20178541290000Transistor module (igbt / igbt) n-type structure with built-wheeling diode. surge capacity of more than 1 watt. designed for use in power converters, motor drives, in wind turbines and others. not scrap el.GERMANYINFINEON14PC24.259443,28 ***** 84 More Columns Available along with Company Name and Other Details etc.
28/Nov/20178541290000Semiconductor transistors power dissipation 1 w, for mounting on a printed circuit board, not creating disturbing electromagnetic field:***SEMIKRON2PC172431,5 *****
28/Sep/20178541290000Semiconductor transistors power dissipation 1 w, for mounting on a printed circuit board, not creating disturbing electromagnetic field: a mos transistor for use in telecommunications equipment, is designed for the breakdown voltage of 2CHINA***0,01KG0.01206,11 *****
16/Sep/20178541290000Semiconductor transistors power dissipation 1 w, for mounting on a printed circuit board, not creating disturbing electromagnetic field: bipolar transistors for use in telecommunications equipment, rated at kMALAYSIA******KG******56,42 *****
12/Sep/20178541290000Transistor: insulated-gate bipolar transistor (the igbt module), is trohelektrodny power semiconductor devices that combine two transistors on a single semiconductor structure - bipolar (formed of power channel) and fieldKOREA REPUBLIC OF***0,88KG0.881537,53 *****
11/Sep/20178541290000Components for medical x-ray equipment: semiconductor products igbt modules (the article is an insulated-gate bipolar transistor - trohelektrodny power semiconductor devices that combine two transistors in one inITALY***1,2KG1.20393,59 *****
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