30/Nov/2017 | 8541290000 | Transistor module (igbt / igbt) n-type structure with built-wheeling diode. surge capacity of more than 1 watt. designed for use in power converters, motor drives, in wind turbines and others. not scrap el. | GERMANY | INFINEON | 14 | PC | 24.25 | 9443,28 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
28/Nov/2017 | 8541290000 | Semiconductor transistors power dissipation 1 w, for mounting on a printed circuit board, not creating disturbing electromagnetic field: | *** | SEMIKRON | 2 | PC | 17 | 2431,5 | ***** |
28/Sep/2017 | 8541290000 | Semiconductor transistors power dissipation 1 w, for mounting on a printed circuit board, not creating disturbing electromagnetic field: a mos transistor for use in telecommunications equipment, is designed for the breakdown voltage of 2 | CHINA | *** | 0,01 | KG | 0.01 | 206,11 | ***** |
16/Sep/2017 | 8541290000 | Semiconductor transistors power dissipation 1 w, for mounting on a printed circuit board, not creating disturbing electromagnetic field: bipolar transistors for use in telecommunications equipment, rated at k | MALAYSIA | *** | *** | KG | ****** | 56,42 | ***** |
12/Sep/2017 | 8541290000 | Transistor: insulated-gate bipolar transistor (the igbt module), is trohelektrodny power semiconductor devices that combine two transistors on a single semiconductor structure - bipolar (formed of power channel) and field | KOREA REPUBLIC OF | *** | 0,88 | KG | 0.88 | 1537,53 | ***** |
11/Sep/2017 | 8541290000 | Components for medical x-ray equipment: semiconductor products igbt modules (the article is an insulated-gate bipolar transistor - trohelektrodny power semiconductor devices that combine two transistors in one in | ITALY | *** | 1,2 | KG | 1.20 | 393,59 | ***** |