30/Nov/2017 | 8541290000 | Semiconductor devices: mosfets with a maximum dissipation of 130w, series irf540n; intended for use in power supply and battery charger. (not scrap electric) | *** | INTERNATIONAL RECTIFIER | 10,000 | PC | 19.52 | 1674,33 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
23/Nov/2017 | 8541290000 | Semiconductor devices: mosfet insulated gate series tpn4r712md; intended for use in lithium-ion secondary batteries, in the switch power management in notebooks, pcs and so on. (not scrap electric) | MALAYSIA | TOSHIBA | 30,000 | PC | 0.60 | 6916,06 | ***** |
29/Sep/2017 | 8541290000 | Powerful field of p-channel mos transistors "irf7328trpbf" with power dissipation 2 w, neprerevnym leakage current of 8a and drain-source voltage 30v is designed for use on a circuit switching and protection of rechargeable battery in a pulsed source: cdc | CHINA | *** | 2,76 | KG | 2.76 | 3895,5 | ***** |
29/Sep/2017 | 8541290000 | Generator assembly, are supplied as components for industrial assembly of motor vehicles brands dc generator assembly from the pulley drive belt. rated voltage 14v. designed to charge batteries and power elektrooboru | CHINA | *** | 0,14 | KG | 0.14 | 767,03 | ***** |
24/Sep/2017 | 8541290000 | Transistors power dissipation 1.2 w: bipolar npn transistors with low voltage saturation pbss4021nx designed for use in switching circuits and load transfer, the device is battery-powered, the system management and distribution | CHINA | *** | 0,12 | KG | 0.12 | 597 | ***** |
10/Sep/2017 | 8541290000 | Transistors power dissipation 1.65 bt is packaged in a plastic coil 2: application: bipolar npn transistors with low voltage saturation pbss4021nx designed for use in switching circuits and load transfer, the device with battery | CHINA | *** | 0,12 | KG | 0.12 | 597 | ***** |