Base Trade Data of Russia Imports under HS Code 8541290000

Get base trade data of Russia imports under HS code 8541290000. Check Russia trade statistics of base imports under HS code 8541290000 with market share and size, price, name of trade partners etc.

22 Shipments Records (Demo)

Base Importers in Russia

8541290000

Date	HS Code	Product Description	Country	Trademark	Quantity	Unit	Net Weight	Total Value [USD]	Importer Name	Click to view 84 more columns 84 More Columns Available Stat Declaration no Customs code Date Broker or declarant number Direction Direction en Customs mode Sender id Sender Exporter name Sending country code Sending country Sender address Sender address en Oktat sender Total items Number of places Recipient inn Recipient Importer Recipient country code Recipient country Destination address Destination address en Receiver okato Tin for financial settlement Responsible for financial settlement Responsible for financial settlement en Responder address for financial settlement Responder address for financial settlement en Okato responsible for financial settlement Trading country code Trading country Total customs value Customs value currency code Tin of the declarant Name of the declarant Name of the declarant en Address of the declarant Address of the declarant en Okpo declarant Country of departure Country of departure en Country code of departure Country of origin Country origin Country code of destination Country of destination Country destination Indication of container traffic Delivery condition code Goods delivery point Place Contract currency code Total amount on the account Exchange rate Transport at the border code Transport at the border Product description and specifications Product description Manufacturer company Manufacturer company en Trademark Trademark en Product places Quantity Additional unit Unit Hs code Country of origin code Gross weight kg Preferences Preferences en Net weight Quota Invoice value Symptom ccc Method for determining the vehicle Customs cost Fob value in usd Release date of cargo Payment amount usd Payment amount rub 84 More Columns Available Stat Declaration no Customs code Date Broker or declarant number Direction Direction en Customs mode Sender id Sender Exporter name Sending country code Sending country Sender address Sender address en Oktat sender Total items Number of places Recipient inn Recipient Importer Recipient country code Recipient country Destination address Destination address en Receiver okato Tin for financial settlement Responsible for financial settlement Responsible for financial settlement en Responder address for financial settlement Responder address for financial settlement en Okato responsible for financial settlement Trading country code Trading country Total customs value Customs value currency code Tin of the declarant Name of the declarant Name of the declarant en Address of the declarant Address of the declarant en Okpo declarant Country of departure Country of departure en Country code of departure Country of origin Country origin Country code of destination Country of destination Country destination Indication of container traffic Delivery condition code Goods delivery point Place Contract currency code Total amount on the account Exchange rate Transport at the border code Transport at the border Product description and specifications Product description Manufacturer company Manufacturer company en Trademark Trademark en Product places Quantity Additional unit Unit Hs code Country of origin code Gross weight kg Preferences Preferences en Net weight Quota Invoice value Symptom ccc Method for determining the vehicle Customs cost Fob value in usd Release date of cargo Payment amount usd Payment amount rub
01/Nov/2017	8541290000	Transistor modules - based on igbt-transistors.	***	MITSUBISHI ELECTRIC	13	PC	15.60	2081,69	*****	84 More Columns Available along with Company Name and Other Details etc.
29/Sep/2017	8541290000	Transistor semiconductor (bipolar), silicon, fcx591a, voltage kolletor-base 40v, collector current of 1a, 1w, size 4.5 * 4.0 * 1.6mm, tv models for prom.sborki ue60ku6000uxru. art: 0502-001346 diodes limited diodes 79000	CHINA	***	14,4	KG	14.40	1385,22	*****
27/Sep/2017	8541290000	Transistor modules. transistor module based on igbt-transistors. for applications in industrial electronics. input voltage 14.5-15.5 v. current output 36 a. output power 5 w infineon technologies ag infineon fz2400r17hp4_b29 24	COSTA RICA	***	31,6	KG	31.60	16528,87	*****
27/Sep/2017	8541290000	Transistor modules. transistor modules - based on igbt-transistors. designed for use in inverters, circuit breaker and so on. not scrap el.oborudovaniya. surge capacity of more than 1 watt. diodes with integrated reverse. transistor	COSTA RICA	***	7,05	KG	7.05	1095,82	*****
25/Sep/2017	8541290000	Fet transistor kse350stu produced by fairchild is a bipolar transistor - bjt. used in network switches, valves. configuration: single. transistor polarity: pnp. voltage emitter-base (vebo): 5 v. tr	UNITED STATES	***	12,7	KG	12.70	5134,64	*****
21/Sep/2017	8541290000	Power fet smd based gallium arsenide are intended for use in electronics particularly in bandpass amplifier, devices radiocommunications - not a waste electrical or crowbar: voltage	JAPAN	***	0,09	KG	0.09	1221,74	*****
13/Sep/2017	8541290000	Field effect transistors stw34nm60n based mosfets. maximum drain-source voltage 600v. power dissipation 250w. it used within a block of the bip-01 as part voltage converter for cathodic protection "energomera" pnkz-ppc-m10 series transistors in and	CHINA	***	1,21	KG	1.21	401,4	*****
12/Sep/2017	8541290000	Transistor, other things, based on silicon for voltage 20v, 30w power dissipation, : polyfet rf devices "polyfet" sq201 sq201 10	UNITED STATES	***	0,17	KG	0.17	676,34	*****
05/Sep/2017	8541290000	Insulated-gate bipolar transistor with three power contacts. has rectangular body with heat-removing base. voltage up to 1200v, current to 400a. it is used for voltage conversion p / n 3718048.01 - 1 unit symbols:: 020-	***	***	0,3	KG	0.30	268,13	*****
05/Sep/2017	8541290000	Transistors except phototransistor insulated-gate bipolar transistor (igbt - insulated gate bipolar transistors) - fully controllable semiconductor device, based on three-layer structure. it on and off is carried out	HONG KONG	***	0,14	KG	0.14	35,68	*****

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