W R Trade Data of Russia Exports under HS Code 8541210000

Get w r trade data of Russia exports under HS code 8541210000. Check Russia trade statistics of w r exports under HS code 8541210000 with market share and size, price, name of trade partners etc.

 
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36 Shipments Records (Demo)

8541210000  
DateHS CodeProduct DescriptionDestination CountryTrademarkQuantityUnitNet WeightTotal Value [USD] Exporter Name
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24/Nov/20178541210000Transistor semiconductor power dissipation 0, 64vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create a missile weapon not to create a weapon andPOLANDNEX-NXP6,030PC0.2263 ***** 84 More Columns Available along with Company Name and Other Details etc.
23/Nov/20178541210000Transistor semiconductor power dissipation 0.25 w for electronic equipment (not scrap electric not for nuclear purposes, not to create a missile weapon, than creating weapons and military equipment)POLANDNEX-NXP3,800PC0.1138 *****
21/Nov/20178541210000Transistors germanium floatable pnp, to work in switching circuit, the output stage low frequency amplifiers, converters and voltage stabilizers, operating temperature range -60 ... + 70 � c: p215REPUBLIC OF INDIAFine "Azon"480PC9.2884,62 *****
13/Nov/20178541210000Silicon transistors semiconductor power not exceeding 1 w without superconducting and optical elements, the range of operating temperature -60 ... + 125c, for industrial applications:PEOPLE'S REPUBLIC OF VIETNAMFine "Gaul"4,109PC16.331973,29 *****
09/Nov/20178541210000Transistor semiconductor power dissipation 0, 25vt for consumer electronic appliances, audio-visual equipment. type semiconductor - single-element (silicon) (not scrap electric)POLANDDIOTEC52PC0.000,52 *****
09/Nov/20178541210000Transistor semiconductor power dissipation 0, 3vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric). packed in blisters tape on the reelPOLANDONS20PC0.000,2 *****
08/Nov/201785412100005.2 property according to the list № 11430.1788: ref. for persons. 11 transistor 2t630b - 5 pcs. bipolar transistors silicon maximum power dissipation 0.8w, 120v maximum voltage. provides control of the current in the output circuit due to changeREPUBLIC OF INDIAABSENT5PC0.01108,86 *****
03/Nov/20178541210000Silicon transistors, npn epitaxial-planar structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125c, for industrial applications:REPUBLIC OF INDIAFine "Azon"120PC0.16247,93 *****
03/Nov/201785412100005.2 property according to the list № 11430.1787: ref. for persons. 11 transistor 2t201b - 16 pcs. transistor silicon epitaxial-planar amplifying low frequency in metal-glass housing, power dissipation 0, 15vt collector maximum voltREPUBLIC OF INDIAIZOBRAITELNY SIGN of "silicon"16PC0.02225,43 *****
28/Sep/20178541210000Transistors for electric devices power transistor 0, 23vt: 0, 15vt power transistor power transistor 0, 50vt "zavod iskra", ojsc "saratov factory reception-intensifying lamps": oao "zavod iskra", ojsc "saratov factory acceptance-siiRUSSIA***0,65KG0.65129,85 *****
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