24/Nov/2017 | 8541210000 | Transistor semiconductor power dissipation 0, 64vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create a missile weapon not to create a weapon and | POLAND | NEX-NXP | 6,030 | PC | 0.22 | 63 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
23/Nov/2017 | 8541210000 | Transistor semiconductor power dissipation 0.25 w for electronic equipment (not scrap electric not for nuclear purposes, not to create a missile weapon, than creating weapons and military equipment) | POLAND | NEX-NXP | 3,800 | PC | 0.11 | 38 | ***** |
21/Nov/2017 | 8541210000 | Transistors germanium floatable pnp, to work in switching circuit, the output stage low frequency amplifiers, converters and voltage stabilizers, operating temperature range -60 ... + 70 � c: p215 | REPUBLIC OF INDIA | Fine "Azon" | 480 | PC | 9.28 | 84,62 | ***** |
13/Nov/2017 | 8541210000 | Silicon transistors semiconductor power not exceeding 1 w without superconducting and optical elements, the range of operating temperature -60 ... + 125c, for industrial applications: | PEOPLE'S REPUBLIC OF VIETNAM | Fine "Gaul" | 4,109 | PC | 16.33 | 1973,29 | ***** |
09/Nov/2017 | 8541210000 | Transistor semiconductor power dissipation 0, 25vt for consumer electronic appliances, audio-visual equipment. type semiconductor - single-element (silicon) (not scrap electric) | POLAND | DIOTEC | 52 | PC | 0.00 | 0,52 | ***** |
09/Nov/2017 | 8541210000 | Transistor semiconductor power dissipation 0, 3vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric). packed in blisters tape on the reel | POLAND | ONS | 20 | PC | 0.00 | 0,2 | ***** |
08/Nov/2017 | 8541210000 | 5.2 property according to the list № 11430.1788: ref. for persons. 11 transistor 2t630b - 5 pcs. bipolar transistors silicon maximum power dissipation 0.8w, 120v maximum voltage. provides control of the current in the output circuit due to change | REPUBLIC OF INDIA | ABSENT | 5 | PC | 0.01 | 108,86 | ***** |
03/Nov/2017 | 8541210000 | Silicon transistors, npn epitaxial-planar structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125c, for industrial applications: | REPUBLIC OF INDIA | Fine "Azon" | 120 | PC | 0.16 | 247,93 | ***** |
03/Nov/2017 | 8541210000 | 5.2 property according to the list № 11430.1787: ref. for persons. 11 transistor 2t201b - 16 pcs. transistor silicon epitaxial-planar amplifying low frequency in metal-glass housing, power dissipation 0, 15vt collector maximum volt | REPUBLIC OF INDIA | IZOBRAITELNY SIGN of "silicon" | 16 | PC | 0.02 | 225,43 | ***** |
28/Sep/2017 | 8541210000 | Transistors for electric devices power transistor 0, 23vt: 0, 15vt power transistor power transistor 0, 50vt "zavod iskra", ojsc "saratov factory reception-intensifying lamps": oao "zavod iskra", ojsc "saratov factory acceptance-sii | RUSSIA | *** | 0,65 | KG | 0.65 | 129,85 | ***** |