30/Nov/2017 | 3818009000 | Substance in the form thermoelectric semiconductor cubic element, predna. for manufacturing thermoelectric modules, ahf. on peltier effect is supplied complete with this documentation products really made under | UNITED KINGDOM | WITHOUT A TRADEMARK | *** | *** | 0.12 | 2591,1 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
28/Nov/2017 | 3818001000 | Substrate sifas (silicon fiber array substrate). made of silicon wafers, which by means of photolithography betrays shape defined its use as a consumable parts of the projection optical electron-optical module columns | KINGDOM OF THE NETHERLANDS | ABSENT | *** | *** | 0.20 | 65947,94 | ***** |
22/Nov/2017 | 3818001000 | Silicon is alloyed in the form of a plate for the manufacture of items that will be used as an electrode electron column optical lithography machines: sm.dopolnenie | USA | Telecom-STV | *** | *** | 0.11 | 127,01 | ***** |
08/Nov/2017 | 3818001000 | Epitaxial silicon structures "silicon on silicon" framework spets.№310 / 16-sp on 10/03/2016, (spec. №ex2179pa from 08.07.2017-98sht) a 4 plast.kor. for integration and izg.mikroskhem razl.stepeni discrete elements of mass application | CANADA | NO, RUSSIA | *** | *** | 2.40 | 5,880 | ***** |
28/Sep/2017 | 3818009000 | Crystals terbium gallium garnets (tgg) - 2000 units. length 14mm, width 2.7mm, thickness 2.7mm. chem. composition: tb3ga2o12. used in electronics for optical isolators and faraday rotators. cjsc "sri material" jsc rimst 0 | RUSSIA | *** | 1,66 | *** | 1.66 | 46,000 | ***** |
08/Sep/2017 | 3818001000 | Substrate sifas (silicon fiber array substrate) silicon wafer (no dual purpose): primer sifas silicon wafer. plate using photolithography betrayed form defines the use as an expense of the projection opti | RUSSIA | *** | 0,08 | *** | 0.08 | 5589,32 | ***** |