30/Nov/2017 | 8541300009 | Thyristor t253-500-65-n-80sht. tu3417-042-41687291-2008. material silicon. operating temperature <125 degrees. s., slew rate enable current <4a / iss applied in power converter, as well as other chains | REPUBLIC OF ESTONIA | The uppercase E crossed-T | 80 | PC | 42.80 | 10615,9 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
30/Nov/2017 | 8541300009 | Thyristor t123-320-16-n-20pcs. tu 3417-042-41687291-2008, thyristor modules mt3-320-18-c1-n-2 pcs., tu3417-063-41687291-2014. mt3-1250-8-dn-48sht., the material-silicon. operating temperature <125 degrees. from., | JAPAN | The uppercase E crossed-T | 70 | PC | 199.28 | 11427,4 | ***** |
29/Nov/2017 | 8541300009 | Thyristor inductotherm ip # 147-2185-pe-245sht. tu 3417-041-41687291-2008. material kremniy.temperatura use <125 degrees. s., slew rate enable current <4a / iss | REPUBLIC OF INDIA | ABSENT | 245 | PC | 131.10 | 16,415 | ***** |
29/Nov/2017 | 8541300009 | Thyristor modules mt3-540-14-a2-n-600sht tu 3417-028-41687291-2002, material -. silicon. operating temperature <125 degrees. s., slew rate enable current <4a / iss | REPUBLIC OF INDONESIA | The uppercase E crossed-T | 600 | PC | 900 | 37618,34 | ***** |
28/Nov/2017 | 8541300009 | Thyristor tbi243-500-22-a2k3-uhl2-20sht., tbi343-500-15-a2h3-uhl2-14sht. tu 3417-029-41687291-2003, t153-630-24-uhl2-50sht., t133-400 -24-70-uhl2-20sht., muish.432533.001 tu (tu substitute 3417-003-41687291-97) | UKRAINE | The uppercase E crossed-T | 269 | PC | 107.63 | 22258,02 | ***** |
27/Nov/2017 | 8541300009 | Other thyristors, scrs dinistorov and except photosensitive devices. crystals on a plate: mmbt6028 - 50108 pcs. (on plates 7) is a silicon wafer diametrom76 mm with the crystals, are intermediates for the manufac | USA | ABSENT | 50,108 | PC | 0.18 | 7265,66 | ***** |
23/Nov/2017 | 8541300009 | Semiconductor thyristor modules for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create a missile weapon, than creating weapons and military equipment). up | POLAND | SMK | 5 | PC | 0.86 | 199,8 | ***** |
20/Nov/2017 | 8541300009 | Thyristor silicon, diffusion, structure pnpn, for use as a switching element, maximum reverse voltage up to 500v, for industrial applications: ku108zh | REPUBLIC OF INDIA | Fine "BETA ELECTRONICS" | 9 | PC | 0.35 | 55,54 | ***** |
10/Nov/2017 | 8541300009 | Other thyristors, scrs dinistorov and except photosensitive devices. crystals on a plate: mmvt6027 - 28700 pcs. (on plates 4) is a silicon wafer 76 mm c crystal is semis | USA | ABSENT | 28,700 | PC | 0.15 | 4247,6 | ***** |
03/Nov/2017 | 8541300009 | 5.2 property according to the list № 11430.1786: ref. for persons. thyristor t122-32-12 3 - 6 pcs. thyristor low frequency - semiconductor components are designed to work in power circuits of direct and alternating current frequency to 500hz, maximum current 3 | REPUBLIC OF INDIA | Figurative mark PJSC "ELECTROVIPRYAMITEL" | 6 | PC | 0.06 | 959,87 | ***** |