29/Nov/2017 | 8541210000 | Silicic transistors field diffusely planar dual insulated gate 0, 2vt capacity of composition communication equipment civil svertoleta mi-8amt | THE SLOVAK REPUBLIC | ABSENT | 10 | PC | 0.01 | 50 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
24/Nov/2017 | 8541210000 | Transistor semiconductor power dissipation 0, 64vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create a missile weapon not to create a weapon and | POLAND | NEX-NXP | 6,030 | PC | 0.22 | 63 | ***** |
21/Nov/2017 | 8541210000 | Transistors germanium floatable pnp, to work in switching circuit, the output stage low frequency amplifiers, converters and voltage stabilizers, operating temperature range -60 ... + 70 � c: p215 | REPUBLIC OF INDIA | Fine "Azon" | 480 | PC | 9.28 | 84,62 | ***** |
13/Nov/2017 | 8541210000 | Transistor semiconductor power dissipation 0, 625vt for consumer electronic appliances, audio-visual equipment. type semiconductor - single-element (silicon). (not scrap electric not for nuclear purposes, not to create weapons and military techno | POLAND | ONS | 100 | PC | 0.02 | 8 | ***** |
09/Nov/2017 | 8541210000 | Transistor semiconductor power dissipation 0, 25vt for consumer electronic appliances, audio-visual equipment. type semiconductor - single-element (silicon) (not scrap electric) | POLAND | DIOTEC | 52 | PC | 0.00 | 0,52 | ***** |
09/Nov/2017 | 8541210000 | Transistor semiconductor power dissipation 0, 3vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric). packed in blisters tape on the reel | POLAND | ONS | 20 | PC | 0.00 | 0,2 | ***** |
08/Nov/2017 | 8541210000 | 4.2 property in list № 171125-0895 from 15/09/17: transistor schu3.365.007tu 2t203g - 51 pcs; transistor zhk3.365.143tu 2t312b - 28 pcs; transistor zhk3.365.143tu 2t312v - 23 pcs; transistor yuf3.365.043tu 2t630b - 28 pcs; matrix transistor i93.456.000tu | REPUBLIC OF INDIA | Not labeled, RUSSIA | 429 | PC | 0.40 | 8275,49 | ***** |
08/Nov/2017 | 8541210000 | 5.2 property according to the list № 11430.1788: ref. for persons. 11 transistor 2t630b - 5 pcs. bipolar transistors silicon maximum power dissipation 0.8w, 120v maximum voltage. provides control of the current in the output circuit due to change | REPUBLIC OF INDIA | ABSENT | 5 | PC | 0.01 | 108,86 | ***** |
04/Nov/2017 | 8541210000 | Transistors not electrical jom, civil purposes, not radio-electronic means having no encryption function (cryptography) intended for use as a component for repair of household appliances samsung. | KINGDOM OF THE NETHERLANDS | SAMSUNG | 8 | PC | 0.09 | 0,08 | ***** |
03/Nov/2017 | 8541210000 | 5.2 property according to the list № 11430.1787: ref. for persons. 11 transistor 2t201b - 16 pcs. transistor silicon epitaxial-planar amplifying low frequency in metal-glass housing, power dissipation 0, 15vt collector maximum volt | REPUBLIC OF INDIA | IZOBRAITELNY SIGN of "silicon" | 16 | PC | 0.02 | 225,43 | ***** |