F M Trade Data of Russia Exports under HS Code 3818

Get f m trade data of Russia exports under HS code 3818. Check Russia trade statistics of f m exports under HS code 3818 with market share and size, price, name of trade partners etc.

 
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34 Shipments Records (Demo)

3818  
DateHS CodeProduct DescriptionDestination CountryTrademarkQuantityUnitNet WeightTotal Value [USD] Exporter Name
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30/Nov/20173818009000Substance in the form thermoelectric semiconductor cubic element, predna. for manufacturing thermoelectric modules, ahf. on peltier effect is supplied complete with this documentation products really made underUNITED KINGDOMWITHOUT A TRADEMARK******0.122591,1 ***** 84 More Columns Available along with Company Name and Other Details etc.
29/Nov/20173818009000Connections chemical doped for use in electronics: plate for light-emitting diodes, cut-on-chip, type plates: "ddh660p" - 300 sq cm (. 40 pcs), chem. composition: ga (20-38%) as (52%) al (10-28%).GERMANYABSENT******0.105895,87 *****
28/Nov/20173818001000Substrate sifas (silicon fiber array substrate). made of silicon wafers, which by means of photolithography betrays shape defined its use as a consumable parts of the projection optical electron-optical module columnsKINGDOM OF THE NETHERLANDSABSENT******0.2065947,94 *****
23/Nov/20173818001000Plate monocrystalline silicon for photovoltaic solar panels cells: sm.dopolnenieCHINAABSENT******11,062.501,519,680 *****
22/Nov/20173818001000Silicon is alloyed in the form of a plate for the manufacture of items that will be used as an electrode electron column optical lithography machines: sm.dopolnenieUSATelecom-STV******0.11127,01 *****
10/Nov/20173818009000Thermoelectric semiconductor material, produced according to tu 1779-001-11300308-08 used in the production of electronic appliances, for easy and safe transportation to the box invested styrofoam plates and foamCHINAABSENT******152.4035,490 *****
08/Nov/20173818001000Epitaxial silicon structures "silicon on silicon" framework spets.№310 / 16-sp on 10/03/2016, (spec. №ex2179pa from 08.07.2017-98sht) a 4 plast.kor. for integration and izg.mikroskhem razl.stepeni discrete elements of mass applicationCANADANO, RUSSIA******2.405,880 *****
03/Nov/20173818009000Polished c 2 sides 60/40 (scr / dig) plate of artificial gallium phosphide (gap), (110):JAPANABSENT******0.00780 *****
02/Nov/20173818009000Single crystal plate high resistivity gallium arsenide compensate chrome (gaas: cr), 4-inch diameter (100 mm) and a thickness of 870 (+/- 50), mkm polished not intended for manufacturing detectors (sensors) registration for ionizingSWITZERLAND*********1.90116430,03 *****
28/Sep/20173818009000Crystals terbium gallium garnets (tgg) - 2000 units. length 14mm, width 2.7mm, thickness 2.7mm. chem. composition: tb3ga2o12. used in electronics for optical isolators and faraday rotators. cjsc "sri material" jsc rimst 0RUSSIA***1,66***1.6646,000 *****
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