30/Nov/2017 | 3818009000 | Substance in the form thermoelectric semiconductor cubic element, predna. for manufacturing thermoelectric modules, ahf. on peltier effect is supplied complete with this documentation products really made under | UNITED KINGDOM | WITHOUT A TRADEMARK | *** | *** | 0.12 | 2591,1 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
29/Nov/2017 | 3818009000 | Connections chemical doped for use in electronics: plate for light-emitting diodes, cut-on-chip, type plates: "ddh660p" - 300 sq cm (. 40 pcs), chem. composition: ga (20-38%) as (52%) al (10-28%). | GERMANY | ABSENT | *** | *** | 0.10 | 5895,87 | ***** |
28/Nov/2017 | 3818001000 | Substrate sifas (silicon fiber array substrate). made of silicon wafers, which by means of photolithography betrays shape defined its use as a consumable parts of the projection optical electron-optical module columns | KINGDOM OF THE NETHERLANDS | ABSENT | *** | *** | 0.20 | 65947,94 | ***** |
23/Nov/2017 | 3818001000 | Plate monocrystalline silicon for photovoltaic solar panels cells: sm.dopolnenie | CHINA | ABSENT | *** | *** | 11,062.50 | 1,519,680 | ***** |
22/Nov/2017 | 3818001000 | Silicon is alloyed in the form of a plate for the manufacture of items that will be used as an electrode electron column optical lithography machines: sm.dopolnenie | USA | Telecom-STV | *** | *** | 0.11 | 127,01 | ***** |
13/Nov/2017 | 3818001000 | Silicon is alloyed: tk missing | KOREA REPUBLIC OF | TK MISSING | *** | *** | 5 | 4,010 | ***** |
10/Nov/2017 | 3818009000 | Thermoelectric semiconductor material, produced according to tu 1779-001-11300308-08 used in the production of electronic appliances, for easy and safe transportation to the box invested styrofoam plates and foam | CHINA | ABSENT | *** | *** | 152.40 | 35,490 | ***** |
08/Nov/2017 | 3818001000 | Epitaxial silicon structures "silicon on silicon" framework spets.№310 / 16-sp on 10/03/2016, (spec. №ex2179pa from 08.07.2017-98sht) a 4 plast.kor. for integration and izg.mikroskhem razl.stepeni discrete elements of mass application | CANADA | NO, RUSSIA | *** | *** | 2.40 | 5,880 | ***** |
03/Nov/2017 | 3818009000 | Polished c 2 sides 60/40 (scr / dig) plate of artificial gallium phosphide (gap), (110): | JAPAN | ABSENT | *** | *** | 0.00 | 780 | ***** |
02/Nov/2017 | 3818009000 | Single crystal plate high resistivity gallium arsenide compensate chrome (gaas: cr), 4-inch diameter (100 mm) and a thickness of 870 (+/- 50), mkm polished not intended for manufacturing detectors (sensors) registration for ionizing | SWITZERLAND | *** | *** | *** | 1.90 | 116430,03 | ***** |