30/Nov/2017 | 8541290000 | Npn silicon transistors mezaplanarnye structure for work in electronic equipment, maximum power dissipation 50w, for industrial applications: | PEOPLE'S REPUBLIC OF VIETNAM | Fine "BETA ELECTRONICS" | 59 | PC | 1.74 | 61,54 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
29/Nov/2017 | 8541290000 | Transistors not electrical jom, civil purposes, not radio-electronic means having no encryption function (cryptography) intended for use as a component for repair of household appliances samsung. | UKRAINE | SAMSUNG | 6 | PC | 0.10 | 6 | ***** |
29/Nov/2017 | 8541290000 | Transistors application - electronic power control voltage: | UKRAINE | ABSENT | 161 | PC | 1.13 | 1057,63 | ***** |
28/Nov/2017 | 8541290000 | Module igbt mifa-hb12fa-150n-12p. tu 3417-065-41687291-2016. designed for switching heavy loads and used as part of the inverter and the electric motor power of low and medium power. | UKRAINE | The uppercase E crossed-T | 12 | PC | 2.04 | 433,74 | ***** |
27/Nov/2017 | 8541290000 | Power transistors, power 70 tues. to strengthen and control of electrical signaled. device intended for amplifying, oscillating or frequency conversion electric currents. it is a powerful mosfet. transistors based on mos-st | REPUBLIC OF ESTONIA | STMICROELECTRONICS | 92,500 | PC | 54.70 | 17859,29 | ***** |
27/Nov/2017 | 8541290000 | Sborka.sborka transistor comprises a transistor designed for operation in the frequency range up to 1mhz (0, 001ggts) | GERMANY | WITHOUT A TRADEMARK | 26 | PC | 1.50 | 9239,1 | ***** |
24/Nov/2017 | 8541290000 | Transistors, solid-state, power dissipation 1 w, not scrap, not for f / a transportation not for radiation of non medical naznachenichya for appliances samsung | KOREA REPUBLIC OF | SAMSUNG GALAXY S | 1 | PC | 0.01 | 0,01 | ***** |
24/Nov/2017 | 8541290000 | Transistor semiconductor power dissipation of 1.4 w for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create a missile weapon not to create a weapon and | POLAND | AOS | 550 | PC | 0.03 | 33 | ***** |
20/Nov/2017 | 8541290000 | Bipolar transistor silicon pnp low frequency structure, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the current transistor 4mhz, for industrial applications: 2t836a | REPUBLIC OF INDIA | Fine "Elter" | 400 | PC | 0.38 | 703,22 | ***** |
13/Nov/2017 | 8541290000 | Transistor semiconductor dissipation of 110w for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create weapons and military equipment). packed in shining | POLAND | INFIN | 175 | PC | 0.36 | 64,75 | ***** |