30/Nov/2017 | 8541290000 | Npn silicon transistors mezaplanarnye structure for work in electronic equipment, maximum power dissipation 50w, for industrial applications: | PEOPLE'S REPUBLIC OF VIETNAM | Fine "BETA ELECTRONICS" | 59 | PC | 1.74 | 61,54 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
28/Nov/2017 | 8541290000 | Transistors, power dissipation 1w more for household appliances brand samsung (civil use, not scrap electric): | GEORGIA | SAMSUNG | 1 | PC | 0.02 | 9,66 | ***** |
28/Nov/2017 | 8541290000 | Module igbt mifa-hb12fa-150n-12p. tu 3417-065-41687291-2016. designed for switching heavy loads and used as part of the inverter and the electric motor power of low and medium power. | UKRAINE | The uppercase E crossed-T | 12 | PC | 2.04 | 433,74 | ***** |
27/Nov/2017 | 8541290000 | Power transistors, power 70 tues. to strengthen and control of electrical signaled. device intended for amplifying, oscillating or frequency conversion electric currents. it is a powerful mosfet. transistors based on mos-st | REPUBLIC OF ESTONIA | STMICROELECTRONICS | 92,500 | PC | 54.70 | 17859,29 | ***** |
27/Nov/2017 | 8541290000 | Sborka.sborka transistor comprises a transistor designed for operation in the frequency range up to 1mhz (0, 001ggts) | GERMANY | WITHOUT A TRADEMARK | 26 | PC | 1.50 | 9239,1 | ***** |
24/Nov/2017 | 8541290000 | Module transistor semiconductor power dissipation 1, 3vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create a missile weapon, than creating boop | POLAND | INFIN | 140 | PC | 0.02 | 33,6 | ***** |
20/Nov/2017 | 8541290000 | Bipolar transistor silicon pnp low frequency structure, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the current transistor 4mhz, for industrial applications: 2t836a | REPUBLIC OF INDIA | Fine "Elter" | 400 | PC | 0.38 | 703,22 | ***** |
13/Nov/2017 | 8541290000 | Transistor semiconductor power dissipation 1, 3vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create weapons and military equipment). packed in blisters | POLAND | INFIN | 6,100 | PC | 0.28 | 269 | ***** |
09/Nov/2017 | 8541290000 | Module for semiconductor igbt transistors industrial electronic equipment. type semiconductor - single-element (silicon) (not scrap electric) | POLAND | SMK | 4 | PC | 1.30 | 419,56 | ***** |
08/Nov/2017 | 8541290000 | 5.2 property according to the list № 11430.1781: ref. for persons. 49 transistor p210sh - 18 pcs. transistor germanium alloyed universal low frequency high power, 64b maximum voltage, maximum power dissipation 1.5w. apply | REPUBLIC OF INDIA | IZOBRAITELNY mark of JSC "Plant GAMMA" | 18 | PC | 0.68 | 372,61 | ***** |