B D Trade Data of Russia Exports under HS Code 8541290000

Get b d trade data of Russia exports under HS code 8541290000. Check Russia trade statistics of b d exports under HS code 8541290000 with market share and size, price, name of trade partners etc.

 
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26 Shipments Records (Demo)

8541290000  
DateHS CodeProduct DescriptionDestination CountryTrademarkQuantityUnitNet WeightTotal Value [USD] Exporter Name
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30/Nov/20178541290000Npn silicon transistors mezaplanarnye structure for work in electronic equipment, maximum power dissipation 50w, for industrial applications:PEOPLE'S REPUBLIC OF VIETNAMFine "BETA ELECTRONICS"59PC1.7461,54 ***** 84 More Columns Available along with Company Name and Other Details etc.
28/Nov/20178541290000Transistors, power dissipation 1w more for household appliances brand samsung (civil use, not scrap electric):GEORGIASAMSUNG1PC0.029,66 *****
28/Nov/20178541290000Module igbt mifa-hb12fa-150n-12p. tu 3417-065-41687291-2016. designed for switching heavy loads and used as part of the inverter and the electric motor power of low and medium power.UKRAINEThe uppercase E crossed-T12PC2.04433,74 *****
27/Nov/20178541290000Power transistors, power 70 tues. to strengthen and control of electrical signaled. device intended for amplifying, oscillating or frequency conversion electric currents. it is a powerful mosfet. transistors based on mos-stREPUBLIC OF ESTONIASTMICROELECTRONICS92,500PC54.7017859,29 *****
27/Nov/20178541290000Sborka.sborka transistor comprises a transistor designed for operation in the frequency range up to 1mhz (0, 001ggts)GERMANYWITHOUT A TRADEMARK26PC1.509239,1 *****
24/Nov/20178541290000Module transistor semiconductor power dissipation 1, 3vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create a missile weapon, than creating boopPOLANDINFIN140PC0.0233,6 *****
20/Nov/20178541290000Bipolar transistor silicon pnp low frequency structure, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the current transistor 4mhz, for industrial applications: 2t836aREPUBLIC OF INDIAFine "Elter"400PC0.38703,22 *****
13/Nov/20178541290000Transistor semiconductor power dissipation 1, 3vt for consumer electronics. type semiconductor - single-element (silicon) (not scrap electric not for nuclear purposes, not to create weapons and military equipment). packed in blistersPOLANDINFIN6,100PC0.28269 *****
09/Nov/20178541290000Module for semiconductor igbt transistors industrial electronic equipment. type semiconductor - single-element (silicon) (not scrap electric)POLANDSMK4PC1.30419,56 *****
08/Nov/201785412900005.2 property according to the list № 11430.1781: ref. for persons. 49 transistor p210sh - 18 pcs. transistor germanium alloyed universal low frequency high power, 64b maximum voltage, maximum power dissipation 1.5w. applyREPUBLIC OF INDIAIZOBRAITELNY mark of JSC "Plant GAMMA"18PC0.68372,61 *****
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