27/Nov/2017 | 8541290000 | Power transistors, power 70 tues. to strengthen and control of electrical signaled. device intended for amplifying, oscillating or frequency conversion electric currents. it is a powerful mosfet. transistors based on mos-st | REPUBLIC OF ESTONIA | STMICROELECTRONICS | 92,500 | PC | 54.70 | 17859,29 | ***** | 84 More Columns Available along with Company Name and Other Details etc. |
21/Nov/2017 | 8541210000 | Transistors germanium floatable pnp, to work in switching circuit, the output stage low frequency amplifiers, converters and voltage stabilizers, operating temperature range -60 ... + 70 � c: p215 | REPUBLIC OF INDIA | Fine "Azon" | 480 | PC | 9.28 | 84,62 | ***** |
20/Nov/2017 | 8541401000 | Laser diode amplifier, the radiation soa-352-dbut-sm-fc / apc. / not dual purpose is not a crowbar and hazardous waste / intended for light emitting diode sld-381 spectral range of 770-890 nm, allows to increase capacity | IRELAND | ABSENT | 1 | PC | 0.15 | 1,850 | ***** |
14/Nov/2017 | 8541100009 | (4.2) automotive electrical components, with connecting elements diode (c stuffed at contacts tip) operating amperage 3a, voltage 50v, are obtained for the maximum operating temreratury pn transition plus 150 not higher degree | FINLAND | ABSENT | 1,000 | PC | 23.49 | 2018,89 | ***** |
03/Nov/2017 | 8541210000 | Silicon transistors, npn epitaxial-planar structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125c, for industrial applications: | REPUBLIC OF INDIA | Fine "Azon" | 120 | PC | 0.16 | 247,93 | ***** |
03/Nov/2017 | 8541210000 | 5.2 property according to the list № 11430.1787: ref. for persons. 11 transistor 2t201b - 16 pcs. transistor silicon epitaxial-planar amplifying low frequency in metal-glass housing, power dissipation 0, 15vt collector maximum volt | REPUBLIC OF INDIA | IZOBRAITELNY SIGN of "silicon" | 16 | PC | 0.02 | 225,43 | ***** |
27/Sep/2017 | 8541100009 | (4.2) automotive electrical components, with connecting elements diode (c stuffed at contacts tip) operating amperage 3a, voltage 50v, are obtained for the maximum operating temreratury pn transition plus not higher than 150 degrees (4.2) kompo | RUSSIA | *** | 35,24 | KG | 35.24 | 3075,51 | ***** |
27/Sep/2017 | 8541401000 | Laser diode amplifier, the radiation soa-482-dbut-pm-fc / apc. designed for use in a coherent optical medical tomography. / not dual purpose are not crowbar and hazardous waste management / operating principle is based on the principle of action of the laser | RUSSIA | *** | 0,22 | KG | 0.22 | 1,850 | ***** |
22/Sep/2017 | 8541290000 | Npn silicon transistors with transition from the output power of at least 25w, operating speed more 3mhz are designed to amplify signals in electrical equipment: transistor ltd. "saransk plant of precision instruments" sztp not the absence | RUSSIA | *** | 0,3 | KG | 0.30 | 51,52 | ***** |
22/Sep/2017 | 8541290000 | Transistors purpose. have encryption means (cryptography). not scrap electric. no military: designed for use in amplifiers and generators of electronic devices. global hy electronics technology no tpa | RUSSIA | *** | 0,7 | KG | 0.70 | 5303,14 | ***** |