Amp Trade Data of Russia Exports under HS Code 8541

Get amp trade data of Russia exports under HS code 8541. Check Russia trade statistics of amp exports under HS code 8541 with market share and size, price, name of trade partners etc.

 
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17 Shipments Records (Demo)

8541  
DateHS CodeProduct DescriptionDestination CountryTrademarkQuantityUnitNet WeightTotal Value [USD] Exporter Name
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27/Nov/20178541290000Power transistors, power 70 tues. to strengthen and control of electrical signaled. device intended for amplifying, oscillating or frequency conversion electric currents. it is a powerful mosfet. transistors based on mos-stREPUBLIC OF ESTONIASTMICROELECTRONICS92,500PC54.7017859,29 ***** 84 More Columns Available along with Company Name and Other Details etc.
21/Nov/20178541210000Transistors germanium floatable pnp, to work in switching circuit, the output stage low frequency amplifiers, converters and voltage stabilizers, operating temperature range -60 ... + 70 � c: p215REPUBLIC OF INDIAFine "Azon"480PC9.2884,62 *****
20/Nov/20178541401000Laser diode amplifier, the radiation soa-352-dbut-sm-fc / apc. / not dual purpose is not a crowbar and hazardous waste / intended for light emitting diode sld-381 spectral range of 770-890 nm, allows to increase capacityIRELANDABSENT1PC0.151,850 *****
14/Nov/20178541100009(4.2) automotive electrical components, with connecting elements diode (c stuffed at contacts tip) operating amperage 3a, voltage 50v, are obtained for the maximum operating temreratury pn transition plus 150 not higher degreeFINLANDABSENT1,000PC23.492018,89 *****
03/Nov/20178541210000Silicon transistors, npn epitaxial-planar structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125c, for industrial applications:REPUBLIC OF INDIAFine "Azon"120PC0.16247,93 *****
03/Nov/201785412100005.2 property according to the list № 11430.1787: ref. for persons. 11 transistor 2t201b - 16 pcs. transistor silicon epitaxial-planar amplifying low frequency in metal-glass housing, power dissipation 0, 15vt collector maximum voltREPUBLIC OF INDIAIZOBRAITELNY SIGN of "silicon"16PC0.02225,43 *****
27/Sep/20178541100009(4.2) automotive electrical components, with connecting elements diode (c stuffed at contacts tip) operating amperage 3a, voltage 50v, are obtained for the maximum operating temreratury pn transition plus not higher than 150 degrees (4.2) kompoRUSSIA***35,24KG35.243075,51 *****
27/Sep/20178541401000Laser diode amplifier, the radiation soa-482-dbut-pm-fc / apc. designed for use in a coherent optical medical tomography. / not dual purpose are not crowbar and hazardous waste management / operating principle is based on the principle of action of the laserRUSSIA***0,22KG0.221,850 *****
22/Sep/20178541290000Npn silicon transistors with transition from the output power of at least 25w, operating speed more 3mhz are designed to amplify signals in electrical equipment: transistor ltd. "saransk plant of precision instruments" sztp not the absenceRUSSIA***0,3KG0.3051,52 *****
22/Sep/20178541290000Transistors purpose. have encryption means (cryptography). not scrap electric. no military: designed for use in amplifiers and generators of electronic devices. global hy electronics technology no tpaRUSSIA***0,7KG0.705303,14 *****
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